4.7 Article

Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots

Journal

APPLIED SURFACE SCIENCE
Volume 256, Issue 12, Pages 3862-3865

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2010.01.041

Keywords

Quantum dots; Annealing; Point defects; Photoluminescence

Funding

  1. Natural Science Foundation of China [60576059]
  2. Chinese National Key Basic Research Special Found [2006CB921700]

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The properties of ZnO quantum dots (QDs) synthesized by the sol-gel process are reported. The primary focus is on investigating the origin of the visible emission from ZnO QDs by the annealing process. The Xray diffraction results show that ZnO QDs have hexagonal wurtzite structure and the QD diameter estimated from Debye-Scherrer formula is 8.9 nm, which has a good agreement with the results from transmission electron microscopy images and the theoretical calculation based on the Potential Morphing Method. The room-temperature photoluminescence spectra reveal that the ultraviolet excitation band has a red shift. Meanwhile, the main band of the visible emission shifts to the green luminescence band from the yellow luminescence one with the increase of the annealing temperature. A lot of oxygen atoms enter into Zn vacancies and form oxygen antisites with increasing temperature. That is probably the reason for the change of the visible emission band. (C) 2010 Elsevier B. V. All rights reserved.

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