Enhanced infrared response of Si base p–n diode with self-assembled Ge quantum dots by thermal annealing

Published 2007 View Full Article

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Title
Enhanced infrared response of Si base p–n diode with self-assembled Ge quantum dots by thermal annealing
Authors
Keywords
-
Journal
APPLIED SURFACE SCIENCE
Volume 254, Issue 11, Pages 3376-3379
Publisher
Elsevier BV
Online
2007-11-20
DOI
10.1016/j.apsusc.2007.11.019

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