Article
Engineering, Electrical & Electronic
Lingling Hua, Bihui Zhuang, Jinrong Tian, Yanrong Song, Peng Zhang, Qiang Kan, Lingjuan Zhao
Summary: A 1.3 GHz optically pumped passively mode-locked semiconductor disk laser was used to achieve a high wavelength, short pulse duration, and average output power. By investigating the epitaxy structure of wafer and thermal characteristics of gain chip, methods to improve the laser performance were proposed.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2022)
Article
Physics, Applied
Chen Jiang, Hao Liu, Jun Wang, Xiaomin Ren, Qi Wang, Zhuoliang Liu, Bojie Ma, Kai Liu, Ren Ren, Yidong Zhang, Shiwei Cai, Yongqing Huang
Summary: The study demonstrates the successful room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon. This advancement enhances the feasibility of silicon-based monolithic optoelectronic integration with quantum well lasers.
APPLIED PHYSICS LETTERS
(2022)
Article
Optics
Junsong Peng, Zihan Zhao, Sonia Boscolo, Christophe Finot, Srikanth Sugavanam, Dmitry Churkin, Heping Zeng
Summary: This study observed different types of breather complexes in a mode-locked fiber laser, with intermolecular temporal separation reaching several hundreds of picoseconds, indicating long-range interactions. This opens the possibility of studying the dynamics of many-body systems where breathers are the elementary constituents.
LASER & PHOTONICS REVIEWS
(2021)
Article
Chemistry, Multidisciplinary
Junjie Yang, Keshuang Li, Hui Jia, Huiwen Deng, Xuezhe Yu, Pamela Jurczak, Jae-Seong Park, Shujie Pan, Wei Li, Siming Chen, Alwyn Seeds, Mingchu Tang, Huiyun Liu
Summary: This study clarifies the mechanism of APB annihilation and the interaction between TDs and periodic APBs during the growth of GaAs on a CMOS-compatible Si (001) substrate. It is found that both APBs and TDs can be reduced simultaneously by optimizing GaAs growth methods. This finding opens up possibilities for growing high-performance III-V optoelectronic devices on CMOS-compatible Si (001) substrates.
Article
Optics
Jianan Duan, Bozhang Dong, Weng W. Chow, Heming Huang, Shihao Ding, Songtao Liu, Justin C. Norman, John E. Bowers, Frederic Grillot
Summary: This work compares the FWM effect in epitaxial QD lasers grown on silicon with QW lasers. The results show good agreement between theory and experiment, with the measured FWM coefficient matching theoretical predictions. Despite the same FWM coefficient, p-doped QD lasers exhibit higher gain in signal power than undoped lasers. QD lasers, with their near-zero linewidth enhancement factor, have FWM coefficients and conversion efficiency more than one order of magnitude higher than QW lasers, leading to self-mode locking. These findings are important for developing on-chip sources for photonic integrated circuits on silicon.
PHOTONICS RESEARCH
(2022)
Article
Engineering, Electrical & Electronic
Mohammad Heydari, Aref Rasoulzadeh Zali, Reza Esmailpour Gildeh, Ali Farmani
Summary: In this study, the structure of quantum dot passively mode-locked lasers (QDMLLs) with colliding-pulse mode-locked (CPM) method was investigated to enhance its performance for ultrahigh-bit-rate compared to self-colliding pulse mode-locking (SCPM) method. Through numerical simulations, it was found that the bit rate in the CPM structure is twice that of the SCPM structure, and the grating coupling factor (GCF) changes were shown to affect the laser output power from pulsed to continuous wave operation within a certain range.
IEEE SENSORS JOURNAL
(2022)
Article
Optics
F. Gallazzi, M. Jimenez-Rodriguez, E. Monroy, P. Corredera, M. Gonzalez-Herraez, F. B. Naranjo, J. D. Ania Castanon
Summary: This research demonstrates the experimental realization of a simple passive ultrafast harmonically mode-locked ultralong ring fiber laser architecture using InN-based SESAMs. The generated ultrashort pulses have high peak power without the need for external amplification stages, meeting the requirements for high peak power demanding applications such as materials processing.
OPTICS AND LASER TECHNOLOGY
(2021)
Article
Optics
Jing-Zhi Huang, Wen-Qi Wei, Jia-Jian Chen, Zi-Hao Wang, Ting Wang, Jian-Jun Zhang
Summary: This study achieved the monolithic integration of a stable III-V laser on a standard silicon-on-insulator substrate, proposed a double-side heat dissipation design, successfully demonstrated room-temperature operation of InAs/GaAs QD lasers, and showed the effectiveness of top heat sink design through thermal profile simulation.
Article
Optics
Zi-Hao Wang, Wen-Qi Wei, Qi Feng, Ting Wang, Jian-Jun Zhang
Summary: Silicon-based InAs quantum dot mode locked lasers offer advantages of high frequency, low power consumption, and low-cost production, but larger linewidths may introduce additional phase noise. A demonstration of a single section MLL grown on a silicon substrate showed significant reduction in RF linewidth through self-injection feedback locking.
Article
Optics
Elisa Riccardi, Valentino Pistore, Seonggil Kang, Lukas Seitner, Anna De Vetter, Christian Jirauschek, Juliette Mangeney, Lianhe Li, A. Giles Davies, Edmund H. Linfield, Andrea C. Ferrari, Sukhdeep S. Dhillon, Miriam S. Vitiello
Summary: By using multilayer graphene saturable absorbers, we have successfully demonstrated a self-starting miniaturized short pulse terahertz laser, which utilizes an original device architecture with surface patterning in the entire cavity of a double-metal semiconductor 2.30-3.55 THz wire laser. This compact, all-electronic, all-passive, and inexpensive configuration achieves self-starting pulsed emission with 4.0 ps-long pulses.
Article
Optics
Hao Liang, Tingting Jin, Chaodan Chi, Jialiang Sun, Xiaolei Zhang, Tiangui You, Min Zhou, Jiajie Lin, Shumin Wang
Summary: This research successfully fabricated communication band InAs QD ridge waveguide lasers on GaAsOI substrates using ion-slicing technique and molecular beam epitaxy growth. The devices showed comparable performance to those on GaAs substrates, demonstrating great potential for highly integrated light sources on silicon for photonic integrated circuits.
Article
Optics
Zunren Lv, Shuai Wang, Shenglin Wang, Hongyu Chai, Lei Meng, Xiaoguang Yang, Tao Yang
Summary: Direct epitaxial growth of high-performance III-V light sources on silicon photonics chips with excellent thermal stability has been achieved. A GaAs buffer layer with low threading dislocation density was grown on on-axis Si (001) using molecular beam epitaxy, followed by an eight-layer quantum dot laser structure with p-type modulation doping. The resulting quantum dot laser exhibits ultra-high temperature stability in a wide temperature range and achieves a maximum continuous-wave operating temperature of 150°C.
Article
Optics
Tushar Malica, Krassimir Panajotov, Eugene A. Avrutin, Marc Sciamanna
Summary: This study proposes a dual-laser configuration using two VCSELs placed facing each other as a promising alternative to conventional SESAM mode-locked VECSEL to generate mode-locked pulses. A theoretical model based on time-delay differential rate equations is used to demonstrate that this configuration functions as a typical gain-absorber system. The nonlinear dynamics and pulsed solutions are investigated by exploring the parameter space defined by laser facet reflectivities and current.
Article
Optics
Suguru Yamaoka, Nikolaos-Panteleimon Diamantopoulos, Hidetaka Nishi, Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Takuma Tsurugaya, Shigeru Kanazawa, Hiromasa Tanobe, Takaaki Kakitsuka, Tai Tsuchizawa, Fumio Koyama, Shinji Matsuo
Summary: This study introduces a membrane distributed reflector laser on a silicon carbide substrate, which overcomes the modulation bandwidth limit and achieves high modulation efficiency and frequency, enabling high-speed data transmission.
Article
Optics
Yongli Wang, Bojie Ma, Jian Li, Zhuoliang Liu, Chen Jiang, Chuanchuan Li, Hao Liu, Yidong Zhang, Yang Zhang, Qi Wang, Xinyu Xie, Xiaolang Qiu, Xiaomin Ren, Xin Wel
Summary: In this paper, a simple method is presented to reduce the threading dislocation density (TDD) by using a GaAs buffer, eliminating the need for complicated dislocation filter layers (DFLs) and intermediate buffer layers. A high-quality epitaxial GaAs film was grown on Si (001) by MOCVD, with a TDD of 9.4 x 10(6) cm(-2). InAs/GaAs QDs were grown on this GaAs/Si (001) virtual substrate by MBE, and a high-power QD laser was fabricated, achieving a room temperature continuous-wave output power of 138mW with a threshold current density of 397 A/cm(2) and a lasing wavelength of 1306 nm. This work proposes a simplified method for fabricating high-power QD lasers, which could promote the application of photonic integrated circuits.
Correction
Multidisciplinary Sciences
Lin Chang, Weiqiang Xie, Haowen Shu, Qi-Fan Yang, Boqiang Shen, Andreas Boes, Jon D. Peters, Warren Jin, Chao Xiang, Songtao Liu, Gregory Moille, Su-Peng Yu, Xingjun Wang, Kartik Srinivasan, Scott B. Papp, Kerry Vahala, John E. Bowers
Summary: A correction for this paper has been published at https://doi.org/10.1038/s41467-021-22031-4.
NATURE COMMUNICATIONS
(2021)
Article
Optics
Chen Shang, Eamonn Hughes, Yating Wan, Mario Dumont, Rosalyn Koscica, Jennifer Selvidge, Robert Herrick, Arthur C. Gossard, Kunal Mukherjee, John E. Bowers
Summary: By reducing dislocation densities and efficiently removing misfit dislocations, InAs quantum-dot lasers grown directly on silicon photonic chips show high reliability at high temperatures, breaking records. Statistical analysis predicts a lifetime of over 22 years for median devices, bringing them closer to practical applications.
Article
Optics
Theodore J. Morin, Lin Chang, Warren Jin, Chenlei Li, Joel Guo, Hyundai Park, Minh A. Tran, Tin Komljenovic, John E. Bowers
Summary: The study presents a CMOS-foundry-based Si3N4 photonic platform operating at blue and violet wavelengths, achieving record-high intrinsic Q values and low waveguide propagation losses.
Article
Physics, Applied
Near Margalit, Chao Xiang, Steven M. Bowers, Alexis Bjorlin, Robert Blum, John E. Bowers
Summary: Advancements in silicon photonics and electronics are mutually reinforcing, enabling increased speed and bandwidth for silicon photonics-based assemblies through integration, though electronic system performance is constrained by I/O limitations. Co-packaged silicon photonics and electronics facilitate the continued development and progress of both fields.
APPLIED PHYSICS LETTERS
(2021)
Article
Optics
Ashutosh Rao, Gregory Moille, Xiyuan Lu, Daron A. Westly, Davide Sacchetto, Michael Geiselmann, Michael Zervas, Scott B. Papp, John Bowers, Kartik Srinivasan
Summary: The study introduces an integrated photonics interposer architecture that effectively handles microcomb signals and achieves octave-spanning spectral filtering of optical frequency combs. This technology addresses the challenge of on-chip microcomb processing and has the potential to further apply miniaturized optical systems to other metrology-grade applications successfully.
LIGHT-SCIENCE & APPLICATIONS
(2021)
Article
Engineering, Electrical & Electronic
Christopher R. Fitch, Igor P. Marko, Aidas Baltusis, Daehwan Jung, Justin C. Norman, John E. Bowers, Stephen J. Sweeney
Summary: Silicon-based laser diodes demonstrate high performance and stable operation at relatively low temperatures. The study shows that p-doping can increase the temperature sensitivity of the devices, but also results in higher threshold current densities.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Matteo Buffolo, Federico Lain, M. Zenari, Carlo De Santi, Justin Norman, John E. Bowers, Robert W. Herrick, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Summary: This paper investigates the origin of the optical degradation of InAs quantum dot laser diodes epitaxially grown on silicon. The temperature acceleration of the degradation process is quantitatively evaluated through constant-current stress experiments at different temperatures. The results suggest that the degradation is related to the recombination-enhanced diffusion of Be, the p-type dopant, or the lattice defects limiting Be diffusion. These findings provide new insights on the microscopic origin of the gradual optical degradation of quantum-dot lasers and have wide application in silicon photonics.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2022)
Review
Optics
Lin Chang, Songtao Liu, John E. Bowers
Summary: Integrated photonics offers an attractive approach to realizing optical frequency comb sources, potentially revolutionizing fields such as information processing, time-frequency metrology, and sensing. The article comprehensively examines strategies for optical frequency comb generation in integrated photonics and provides detailed appraisals in the context of prospective applications. High-level integration of optical frequency combs in photonic integrated circuits is summarized, along with a proposed roadmap for transitioning advanced optical frequency comb systems from the lab to the broader world.
Article
Materials Science, Multidisciplinary
Zeyu Zhang, Chen Shang, Justin C. Norman, Rosalyn Koscica, Kaiyin Feng, John E. Bowers
Summary: Quantum dot (QD) lasers grown on silicon have shown promising characteristics, but the technology enabling growth and integration of these lasers on a silicon photonic chip has not yet been demonstrated. A novel device platform has been designed to integrate the QD active region with passive waveguide structures, allowing for the successful demonstration of various high-performance lasers on this platform.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Mario Dumont, Songtao Liu, M. J. Kennedy, John Bowers
Summary: This paper focuses on the efficiency of optical combs generated by quantum dot mode-locked lasers (QDMLLs) and compares their performance with other light sources.
APPLIED SCIENCES-BASEL
(2022)
Article
Optics
Weiqiang Xie, Chao Xiang, Lin Chang, Warren Jin, Jonathan Peters, John E. Bowers
Summary: This study proposes a general heterogeneous integration approach to embed highly nonlinear III-V (AlGaAs) photonics into the silicon-on-insulator (SOI) platform, aiming to extend the capabilities of on-chip devices. By developing low-loss AlGaAs-on-SOI photonic circuits with integrated Si waveguides, the researchers successfully demonstrate sub-milliwatt-threshold Kerr frequency comb generation in ultrahigh-Q AlGaAs microrings. This integration of mature silicon photonics technology with efficient nonlinear functionalities provided by III-V materials advances the emerging applications of chip-based nonlinear engines.
PHOTONICS RESEARCH
(2022)
Article
Optics
Akhilesh S. P. Khope, Robert Zhang, Roger Helkey, Rod C. Alferness, Adel A. M. Saleh, John E. Bowers
Summary: This article presents a compact 4x4 wavelength selective switch with 50% fewer electrical signal pads compared to the previous generation. The loss and crosstalk of the switch in different paths are reported and measured. The results show a median loss of 5.32 dB and a worst-case crosstalk of -35 dB. The improvement in the tuning range of microring resonators compared to the previous generation is also demonstrated. The switch is capable of supporting 8 channels with a spacing of 400 GHz.
Article
Engineering, Electrical & Electronic
Paul A. Morton, Chao Xiang, Jacob B. Khurgin, Christopher D. Morton, Minh Tran, Jon Peters, Joel Guo, Michael J. Morton, John E. Bowers
Summary: This paper introduces a new Integrated Coherent Tunable Laser (ICTL) that offers ultra-wideband wavelength tuning and ultra-low noise performance. The ICTL is designed to be cost-effective and reliable through its utilization of III-V material and a CMOS foundry based Silicon Photonics platform. The ICTL's exceptional laser reflector performance, extended laser cavity length, and low linewidth and phase noise enable highly-coherent output. The ICTL has achieved record integrated laser performance and shows great potential for next-generation applications such as WDM transmission systems, fiber-optic and medical-wearable sensing systems, and automotive LiDAR systems.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2022)
Article
Nanoscience & Nanotechnology
Yating Wan, Justin Norman, Songtao Liu, Alan Liu, John E. Bowers
Summary: Self-assembled QD gain medium has several advantages over conventional QW structures, making it suitable for semiconductor mode-locked lasers and amplifiers. Si photonics has been widely applied, especially for high volume applications and integration with CMOS electronics.
IEEE NANOTECHNOLOGY MAGAZINE
(2021)
