Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4885499
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Funding
- JST/ANR WITH, a Japan-France strategic collaborative research project
- MINECO [TEC2012-32777]
- Russian Foundation for Basic Research [12-02-00813, 14-02-92102]
- Grants-in-Aid for Scientific Research [26820123, 23000008] Funding Source: KAKEN
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We report on room-temperature plasmonic detection of sub-terahertz radiation by InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at 200 GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain-to-source condition. The minimum noise equivalent power was estimated to be 0.48 pW/Hz(0.5) at 200 GHz at room temperature, which is the record-breaking value ever reported for plasmonic THz detectors. Frequency dependence of the responsivity in the frequency range of 0.2-2 THz is in good agreement with the theory. (C) 2014 AIP Publishing LLC.
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