Effect of CoFe insertion in Co2MnSi/CoFe/n-GaAs junctions on spin injection properties

Effect of nonstoichiometry on the half-metallic character of Co2MnSi investigated through saturation magnetization and tunneling magnetoresistance ratio

(2014) Gui-fang Li et al.   PHYSICAL REVIEW B

Spin Injection, Transport, and Detection at Room Temperature in a Lateral Spin Transport Device with Co2FeAl0.5Si0.5/n-GaAs Schottky Tunnel Junctions

(2013) Tatsuya Saito et al.   Applied Physics Express

All-electrical spin injection and detection in the Co2FeSi/GaAs hybrid system in the local and non-local configuration

(2013) P. Bruski et al.   APPLIED PHYSICS LETTERS

Electrical injection of spin-polarized electrons and electrical detection of dynamic nuclear polarization using a Heusler alloy spin source

(2013) Takafumi Akiho et al.   PHYSICAL REVIEW B

Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling

(2012) Hong-xi Liu et al.   APPLIED PHYSICS LETTERS

Spin-Based MOSFETs for Logic and Memory Applications and Spin Accumulation Signals in CoFe/Tunnel Barrier/SOI Devices

(2012) Yoshiaki Saito et al.   IEEE TRANSACTIONS ON MAGNETICS

Large Magnetoresistance Effect in Epitaxial Co$_{2}$Fe$_{0.4}$Mn$_{0.6}$Si/Ag/Co$_{2}$Fe$_{0.4}$Mn$_{0.6}$Si Devices

(2011) Jo Sato et al.   Applied Physics Express

Non-local detection of spin-polarized electrons at room temperature in Co50Fe50/GaAs Schottky tunnel junctions

(2011) Tetsuya Uemura et al.   APPLIED PHYSICS LETTERS

Co2MnGe-based current-perpendicular-to-the-plane giant-magnetoresistance spin-valve sensors for recording head applications

(2011) M. J. Carey et al.   JOURNAL OF APPLIED PHYSICS

Electrical spin injection and transport in germanium

(2011) Yi Zhou et al.   PHYSICAL REVIEW B

Evidence of Electrical Spin Injection Into Silicon Using MgO Tunnel Barrier

(2010) Tomoyuki Sasaki et al.   IEEE TRANSACTIONS ON MAGNETICS

Bias dependence of spin-polarized tunnel current through Fe/GaAs and Fe/GaAs/Fe junctions

(2010) S Honda et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Effect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe magnetic tunnel junctions

(2010) Masafumi Yamamoto et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin-injection device

(2010) G. Salis et al.   PHYSICAL REVIEW B

Mechanism of large magnetoresistance inCo2MnSi/Ag/Co2MnSidevices with current perpendicular to the plane

(2010) Y. Sakuraba et al.   PHYSICAL REVIEW B

Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions

(2009)   APPLIED PHYSICS LETTERS

Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2FeAl0.5Si0.5 electrodes fabricated by molecular beam epitaxy

(2009) N. Tezuka et al.   APPLIED PHYSICS LETTERS

Electrical spin injection and detection in lateral all-semiconductor devices

(2009) M. Ciorga et al.   PHYSICAL REVIEW B

Current-perpendicular-to-plane giant magnetoresistance in spin-valve structures using epitaxial Co2FeAl0.5Si0.5/Ag/Co2FeAl0.5Si0.5 trilayers

(2008) T. Furubayashi et al.   APPLIED PHYSICS LETTERS