Monolithic color-selective ultraviolet (266–315 nm) photodetector based on a wurtzite MgxZn1−xO film
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Title
Monolithic color-selective ultraviolet (266–315 nm) photodetector based on a wurtzite MgxZn1−xO film
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 13, Pages 133510
Publisher
AIP Publishing
Online
2014-10-02
DOI
10.1063/1.4897300
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Related references
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- (2013) Liwen Sang et al. Scientific Reports
- Role of heteroepitaxial misfit strains on the band offsets of Zn1−xBexO/ZnO quantum wells: A first-principles analysis
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- Wavelength selective metal-semiconductor-metal photodetectors based on (Mg,Zn)O-heterostructures
- (2011) Zhipeng Zhang et al. APPLIED PHYSICS LETTERS
- Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain
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- Comparative study of n-MgZnO/p-Si ultraviolet-B photodetector performance with different device structures
- (2011) Y. N. Hou et al. APPLIED PHYSICS LETTERS
- Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
- (2011) H. L. Liang et al. APPLIED PHYSICS LETTERS
- ZnO-Based Ultraviolet Photodetectors
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- Controlled Growth of High-Quality ZnO-Based Films and Fabrication of Visible-Blind and Solar-Blind Ultra-Violet Detectors
- (2009) Xiaolong Du et al. ADVANCED MATERIALS
- Solar-blind 4.55eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffers
- (2009) Z.L. Liu et al. JOURNAL OF CRYSTAL GROWTH
- Fundamentals of zinc oxide as a semiconductor
- (2009) Anderson Janotti et al. REPORTS ON PROGRESS IN PHYSICS
- Band-gap bowing and p-type doping of (Zn, Mg, Be)O wide-gap semiconductor alloys: a first-principles study
- (2008) H.-L. Shi et al. EUROPEAN PHYSICAL JOURNAL B
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