Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

Title
Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 3, Pages 033302
Publisher
AIP Publishing
Online
2014-07-23
DOI
10.1063/1.4891052

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