4.6 Article

Infrared upconversion in radio frequency magnetron sputtered Er-doped zinc oxide thin films

Journal

APPLIED PHYSICS LETTERS
Volume 104, Issue 10, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4868418

Keywords

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Funding

  1. Danish Strategic Research Council

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Upconversion in radio frequency magnetron sputtered Er-doped zinc oxide thin films on Si substrate has been demonstrated using 1550 nm cw laser excitation. As-sputtered thin films did not show any upconversion emission, and annealing was required to optically activate the Er3+-ions. Emissions at 985, 809, and 665-675 nm were observed in annealed thin films, corresponding to transitions from I-4(11/2), I-4(9/2), and F-4(9/2) to the ground state I-4(15/2), respectively. The emission from I-4(11/2) was the dominant one, whereas emission from I-4(9/2) was the weakest. The highest intensity at 985 nm was obtained with 2.4 at.% of Er by annealing the film at 700 degrees C. Annealing at higher temperatures causes Er to diffuse and segregate to the Si-ZnO interface between the Si substrate and the ZnO film. (C) 2014 AIP Publishing LLC.

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