Article
Materials Science, Multidisciplinary
Kiwon Lee
Summary: This study characterizes a series-connected RTD-pair configuration using dynamic capacitance characteristics of the RTD. By utilizing the RTD-pair cell in the RTD oscillator design, enhancements in output power characteristics are achieved, operating at a small capacitance region and beneficial for high frequency and high output power operation.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Nanoscience & Nanotechnology
M. Cito, O. Kojima, B. J. Stevens, T. Mukai, R. A. Hogg
Summary: Photoluminescence excitation spectroscopy (PLE) and high-resolution x-ray diffraction (HR-XRD) were used to characterize the structural and electronic properties of high current density InGaAs/AlAs/InP resonant tunneling diode wafer structures. Through simulation and careful selection of detection wavelength, crucial information about band-offsets was obtained non-destructively. An agreement between HR-XRD data, PL, and PLE data was achieved at a specific conduction band offset percentage of 58.8%. This scheme provides important electronic and structural information without damaging the materials.
Article
Materials Science, Multidisciplinary
Soheil Zibod, Payman Rasekh, Murat Yildrim, Wei Cui, Ravi Bhardwaj, Jean-Michel Menard, Robert W. Boyd, Ksenia Dolgaleva
Summary: This study demonstrates a strong nonlinear response in crystalline quartz in the terahertz frequency region. A theoretical model is modified to predict the Kerr coefficient and the time-domain analysis shows a saturation process with increasing THz amplitude. The nonlinear refractive index is estimated to be several orders of magnitude larger than typical values in the visible region, and a negative fifth-order susceptibility is measured.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Zhijun Ma, Qi Zhang, Lingling Tao, Yihao Wang, Daniel Sando, Jinling Zhou, Yizhong Guo, Michael Lord, Peng Zhou, Yongqi Ruan, Zhiwei Wang, Alex Hamilton, Alexei Gruverman, Evgeny Y. Tsymbal, Tianjin Zhang, Nagarajan Valanoor
Summary: Resonant tunneling and negative differential resistance behaviors modulated by ferroelectricity have been demonstrated in perovskite-oxide quantum well structures, paving the way for ferroelectric-based quantum-tunneling devices in future oxide electronics.
ADVANCED MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Zoltan Jehn, Michael Feiginov
Summary: As a proof of principle, the operation of traveling-wave resonant-tunneling-diodes (RTDs) oscillators has been experimentally demonstrated in the frequency range of 100-400 GHz. A theoretical model has been developed to describe a realistic coupled system, consisting of a traveling-wave RTD and a patch antenna, which depicts the mixed resonance and mode characteristics of both subsystems. The model and experimental results are in agreement. It has also been shown that some oscillators can switch between different resonant modes of the system with a change in bias, offering an extended frequency control for RTD oscillators.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2023)
Article
Physics, Applied
Ignacio Ortega-Piwonka, Oreste Piro, Jose Figueiredo, Bruno Romeira, Julien Javaloyes
Summary: In this paper, we study the dynamics of quantum nanoelectronic resonant tunneling diodes (RTDs) as excitable neuromorphic spike generators, revealing the mechanisms and characteristics of the RTD in producing all-or-nothing spikes in different states. Our research results have significance for applications in event-activated neuromorphic sensing and computing, and can be extended to other devices with negative differential conductance.
PHYSICAL REVIEW APPLIED
(2021)
Article
Nanoscience & Nanotechnology
Kelly L. White, Gordon V. Rogelberg, James P. Custer Jr, James F. Cahoon
Summary: This study reports the fabrication of three-terminal n-type Si nanowire geometric diodes (GDs) that exhibit self-switching diode behavior. The diode current and polarity show a significant dependence on gate potential, and under specific grounding conditions, the polarity of the diodes reverses. Finite-element modeling reveals that the gate potential, along with the morphology and dopant profile, produces an asymmetric potential along the nanowire axis, leading to an asymmetric change in the effective conductive channel and resulting in diode behavior. These findings characterize a new mechanism of operation for nanowire-based GDs and demonstrate a new type of self-switching diode with reconfigurable polarity.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Physics, Applied
Haibing Qiu, Xiangpeng Zhou, Wenxian Yang, Xue Zhang, Shan Jin, Shulong Lu, Hua Qin, Lifeng Bian
Summary: This paper reports bidirectional negative differential resistance (NDR) in Al(Ga)N/GaN/AlN resonant tunneling diodes, grown on free-standing GaN substrates using RF-plasma assisted molecular beam epitaxy. The bidirectional NDR exhibits current-voltage characteristics in both forward and reverse biases at room temperature, attributed to the change in the polarization field in the active region caused by asymmetric barrier components.
APPLIED PHYSICS LETTERS
(2021)
Article
Materials Science, Coatings & Films
Jimy Encomendero, S. M. Islam, Debdeep Jena, Huili Grace Xing
Summary: The development of molecular beam epitaxy (MBE) in the engineering of heterostructures has led to advancements in the field of semiconductor devices, such as the demonstration of negative differential conductance (NDC) in arsenide-based resonant tunneling diodes (RTDs). By discussing key developments in the epitaxy of III-nitride heterostructures, it has been shown that in situ tracking of crystal electron diffraction allows for deterministic control of monolayer incorporation into tunneling barriers, leading to robust resonant tunneling transport in nitride semiconductors. Experimentally, it has been demonstrated that tunneling transport in nitride RTDs is sensitive to epitaxial parameters such as substrate growth temperature and threading dislocation density, providing insight into the engineering of new functionalities within III-nitride semiconductors.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Materials Science, Multidisciplinary
Enes Mutlu, Anton Grygoriev, Simone Clochiatti, Robin Kress, Christian Preuss, Alexander Possberg, Werner Prost, Nils Weimann
Summary: This study focuses on the potential of resonant tunneling diodes for THz applications and optimizes the RF output power and cut-off frequency by adjusting the layer stack design of the devices. The trade-off between collector spacer thickness and doping profile is observed.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Ling Gu, Wei Zhu
Summary: Soft switching based on resonant operation is essential for achieving high power density at high frequencies by reducing switching loss and minimizing electromagnetic interference. A family of zero-voltage-switched (ZVS) isolated resonant converters has been proposed to overcome traditional single-switch resonant converters' voltage stress issues and improve efficiency. The use of parasitic components as part of resonant components allows for zero-voltage switching operation, higher switching frequency, and improved efficiency.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
(2021)
Article
Optics
Liu Jun, Song Rui-Liang, Liu Ning, Liang Shi-Xiong
Summary: This study designs and realizes an oscillator above 1THz using an InP-based resonant tunneling diode (RTD) and an on-chip antenna with a Si-lens. The RTD model is built and studied using Silvaco software. The effects of doping concentration, barrier layer thickness, space layer, and well layer on the DC characteristics of the device have been analyzed. The experimental results show that the oscillator achieves high RF output power and oscillation frequency at an operation frequency above 1THz.
JOURNAL OF INFRARED AND MILLIMETER WAVES
(2022)
Article
Physics, Applied
Jimy Encomendero, Vladimir Protasenko, Debdeep Jena, Huili Grace Xing
Summary: This study demonstrates the impact of collector doping setback on the quantum transport characteristics of GaN/AlN resonant tunneling diodes (RTDs), highlighting the importance of setback in preserving coherent injection and achieving higher peak-to-valley current ratios. The design results in consistently higher PVCRs, with a maximum PVCR = 2.01 obtained at cryogenic temperatures.
APPLIED PHYSICS EXPRESS
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
Michele Cito, Razvan Baba, Osamu Kojima, Ben J. Stevens, Toshikazu Mukai, Richard A. Hogg
Summary: Low-temperature photoluminescence spectroscopy (PL) and excitation spectroscopy (PLE) were used to characterize and compare high current density resonant tunnelling diodes (RTD) structures. The results linked the electrical properties of the structures to the device IV characteristic. The combination of PL and PLE was found to be a powerful, fast, and non-destructive characterization method.
TERAHERTZ, RF, MILLIMETER, AND SUBMILLIMETER-WAVE TECHNOLOGY AND APPLICATIONS XV
(2022)
Article
Engineering, Electrical & Electronic
Tanvir Hossain, Md Istiaque Rahaman, Mahbub Alam
Summary: Resonant tunneling phenomena in armchair graphene nanoribbon (AGNR) are investigated in this study, proposing eight antidote topologies to modify the band gap of AGNR. Both double barrier quantum well and single barrier quantum well structures have been achieved by incorporating the antidote-induced AGNRs and pristine AGNRs. The numerical simulation using a tight binding model and non-equilibrium Green's function formalism reveals high peak to valley ratios and low power dissipation in the proposed RTDs, with performance improvements possible by adjusting the channel length. These graphene-based RTDs offer ease of fabrication and flexibility in performance tuning.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
