4.6 Article

Lateral photovoltaic effect observed in nano Au film covered two-dimensional colloidal crystals

Journal

APPLIED PHYSICS LETTERS
Volume 104, Issue 11, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4869223

Keywords

-

Funding

  1. National Natural Science Foundation of China [51271092, 11374214, 10974135]

Ask authors/readers for more resources

Periodic nanostructure, especially for nano-spheres' structure, is one of the key issues in the current research, due to its anomalous transmission of light and obvious surface plasmon resonance. In this work, a type of anisotropic lateral photovoltaic effect is observed in the Au films covered two-dimensional colloidal crystals (CCs). This finding of lateral photovoltaic effect adds the functionality to the CCs system and will be useful in development of CCs-based devices. (C) 2014 AIP Publishing LLC.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

Article Physics, Applied

High-performance resistive switching memory with embedded molybdenum disulfide quantum dots

Xinna Yu, Ke Chang, Anhua Dong, Zhikai Gan, Kang'an Jiang, Yibin Ling, Yiru Niu, Diyuan Zheng, Xinyuan Dong, Renzhi Wang, Yizhen Li, Zhuyikang Zhao, Peng Bao, Binbin Liu, Yuhong Cao, Su Hu, Hui Wang

Summary: In this study, molybdenum disulfide quantum dots were used to enhance the performance of resistive switching devices, resulting in lower switching voltages, uniform resistance states, improved endurance, and larger on/off ratios. The convergence of electric field distribution around the quantum dots is believed to enhance conductive filament formation, contributing to the optimization of device performance and furthering developments in data storage applications.

APPLIED PHYSICS LETTERS (2021)

Article Physics, Applied

Plasmon-enhanced lateral photovoltaic effect observed in Ag-ZnO core-shell nanoparticles

Xinyuan Dong, Diyuan Zheng, Jing Lu, Yiru Niu, Binbin Liu, Hui Wang

Summary: By utilizing surface plasmon-based techniques, researchers have successfully prepared Ag-ZnO core-shell nanoparticles with enhanced lateral photovoltaic effect. This system exhibits excellent LPE performance with a maximum sensitivity of 122.1 mV/mm, significantly outperforming conventional Ag/Si (5.03 mV/mm) and ZnO/Si (76.13 mV/mm) systems.

APPLIED PHYSICS LETTERS (2021)

Article Physics, Applied

Enhancement of light-induced resistance effect in the nanostructure of Ag/graphene based on the n-type silicon

Shuai Liu, Xinyuan Dong, Yiru Niu, Diyuan Zheng, Zhikai Gan, Hui Wang

Summary: This study reveals an enhanced light-induced resistance effect in the structure of Ag/graphene/n-type Si, demonstrating significant linear resistance change and high sensitivity. By optimizing the thickness of the Ag film, the resistance change ratio can reach 472%, much higher than the control sample. The diffusion and recombination of photocarriers at the heterojunction interface play a crucial role in the enhancement of the effect.

APPLIED PHYSICS LETTERS (2021)

Article Optics

Heterojunction interface-induced enhancement of position-sensitive photodetection in the nano-film of Ti/SrTiO3 based on the p-type silicon

Shuai Liu, Anhua Dong, Xinyuan Dong, Yiru Niu, Diyuan Zheng, Hui Wang

Summary: Complex oxide perovskites, with SrTiO3 as an iconic material, exhibit novel physical phenomena and have gained popularity in electronic devices. The enhancement of lateral photovoltaic effect sensitivity by SrTiO3 nano-film offers an effective way to improve oxide-based photodetection devices.

OPTICS LETTERS (2021)

Article Physics, Applied

Improved Al2O3 RRAM performance based on SiO2/MoS2 quantum dots hybrid structure

Yiru Niu, Xinna Yu, Xinyuan Dong, Diyuan Zheng, Shuai Liu, Zhikai Gan, Ke Chang, Binbin Liu, Kang'an Jiang, Yizhen Li, Hui Wang

Summary: By controlling the formation and fracture of conductive filaments at the interface, adding a SiO2/MoS2 QD hybrid structure can transform the reset mode of RRAM from progressive to abrupt, significantly improving the switching window and performance.

APPLIED PHYSICS LETTERS (2022)

Article Chemistry, Physical

Selectively enhanced violet and infrared position sensitive photodetectors based on RTA treated ZnO/Si

Xinyuan Dong, Diyuan Zheng, Jing Lu, Yiru Niu, Hui Wang

Summary: The study demonstrates selectively enhanced violet and near-infrared effects in ZnO/Si homo-heterostructure, with sensitivity controlled by manipulating annealing temperature. The increase in optical response time of the annealed sample by about 25 times is attributed to defect ionization in the ZnO layer and resistivity change after annealing.

APPLIED SURFACE SCIENCE (2021)

Article Chemistry, Physical

Ultrafast and hypersensitized detection based on van der Waals connection in two-dimensional WS2/Si structure

Diyuan Zheng, Xinyuan Dong, Jing Lu, Yiru Niu, Hui Wang

Summary: WS2, a typical TMDs with strong light-matter interaction, shows great potential for highly-responsive photoelectric detectors. The WS2 nano-films prepared by ALD exhibit a high-performance lateral photovoltaic effect with high position sensitivity and ultrafast response speed, while the absorption wavelength of lateral photovoltage changes significantly as the thickness of WS2 decreases, indicating a correlation between materials bandgap and LPV.

APPLIED SURFACE SCIENCE (2022)

Article Engineering, Electrical & Electronic

Efficient Hot Electron Extraction in Ag-Cu/TiO2 for High Performance Lateral Photovoltaic Effect

Xinyuan Dong, Diyuan Zheng, Jing Lu, Yiru Niu, Hui Wang

Summary: The study focuses on enhancing the lateral photovoltaic effect by adjusting the d-band density of states of nanoparticles, leading to improved hot electron injection efficiency in surface plasmon-based LPE. The modification resulted in enhanced LPE in TiO2/Ag-Cu NPs/Si structure, showing superior lateral photovoltage sensitivity compared to samples with Cu NPs and Ag NPs, particularly under 445 nm laser irradiation. These findings provide a promising approach for boosting photoelectric conversion in LPE and potentially expanding the applications of high sensitivity LPE-based optoelectronic devices.

IEEE ELECTRON DEVICE LETTERS (2021)

Article Chemistry, Multidisciplinary

High-Sensitivity Infrared Photoelectric Detection Based on WS2/Si Structure Tuned by Ferroelectrics

Diyuan Zheng, Xinyuan Dong, Jing Lu, Yiru Niu, Hui Wang

Summary: By using P(VDF-CTFE) as a ferroelectric gate, the sensitivity and infrared detection performance of WS2/Si junctions have been successfully improved, allowing for broadening of the absorption wavelength range and enhancing the sensitivity of lateral photovoltaic effect. The significant improvement in response speed is attributed to the increase in carrier initial kinetic energy, providing a new approach for high-sensitivity, ultrafast, and stable infrared photodetection.

SMALL (2022)

Article Physics, Applied

Compliance-Current Manipulation of Dual-Filament Switching in a Ta/Ta2O5/In-Sn-O Structure with an Ultralow Power Consumption

Binbin Liu, Ke Chang, Xinna Yu, Yiru Niu, Xinyuan Dong, Hui Wang

Summary: The study found that both gradual and abrupt reset behaviors exist in the Ta/Ta2O5/In-Sn-O structure, and the reset processes can be controlled by different compliance currents. The different compositions of conductive filaments lead to different resistive switching behaviors.

PHYSICAL REVIEW APPLIED (2021)

Article Nanoscience & Nanotechnology

Unconventional Resistive Switching Behavior in Fibroin-Based Memristor

Ke Chang, Anhua Dong, Xinna Yu, Binbin Liu, Xinhui Zhao, Renzhi Wang, Zhikai Gan, Kang'an Jiang, Yiru Niu, Xinyuan Dong, Diyuan Zheng, Yizhen Li, Peng Bao, Zhuyikang Zhao, Hui Wang

Summary: By utilizing Ag-doped fibroin film as a switching medium, a high-performance transient memristor with self-assembled Ag nanoclusters model is designed and fabricated, showing novel electron-transport properties. The device can operate at ultralow voltages and has an extremely high memory window, opening up a new pathway for designing high-performance transient memristors for a safe and reliable data storage system.

ADVANCED ELECTRONIC MATERIALS (2022)

Article Physics, Applied

Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping MoS2 Quantum Dots

Yizhen Li, Xinhui Zhao, Ke Chang, Yiru Niu, Xinna Yu, Hui Wang

Summary: This study improved the resistive switching behavior of a memory device by adding MoS2 quantum dots between the W bottom electrode and ZnO insulator. The modified device showed better switching properties and was successfully transferred onto a polyvinyl alcohol substrate, making it fully degradable.

PHYSICAL REVIEW APPLIED (2022)

Article Optics

Laser-amplified nonvolatile charge trapping effect in semiconductor quantum dot structures

Yuhong Cao, Kang'an Jiang, Zhuyikang Zhao, Hui Wang

Summary: Optoelectronic memory is a promising strategy for emulating the human visual system, but current devices lack the ability to store visual information. In this study, we discovered a light-induced trapping effect that allows for long-term storage of optical signals in a molybdenum disulfide quantum dot memory structure. The trapping capability can be significantly enhanced through laser irradiation, showcasing the potential of this approach for artificial intelligence devices.

OPTICA (2023)

Article Physics, Applied

High-performance Ta2O5-based resistive random-access memory with embedded graphene quantum dots and Pt-Ag composite active layer

Renzhi Wang, Ke Chang, Xinhui Zhao, Xinna Yu, Saiqun Ma, Zhuyikang Zhao, Hui Wang

Summary: This study investigates the impact of device kinetic parameters on the stability of resistive switching behavior and proposes a high-performance RRAM with a Pt-Ag/Ta2O5/GQDs/Pt structure. Quantum dots can regulate the direction of Ag ion migration, while the Pt-Ag composite electrode can manipulate the oxidation rate of Ag atoms. Compared to the Ag/Ta2O5/GQDs/Pt device, the Pt-Ag/Ta2O5/GQDs/Pt device exhibits significantly improved performance.

APPLIED PHYSICS LETTERS (2023)

Article Chemistry, Multidisciplinary

Photoinduced Nonvolatile Resistive Switching Behavior in Oxygen-Doped MoS2 for a Neuromorphic Vision System

Ke Chang, Xinhui Zhao, Xinna Yu, Zhikai Gan, Renzhi Wang, Anhua Dong, Zhuyikang Zhao, Yafei Zhang, Hui Wang

Summary: In this work, a light-triggered nonvolatile resistive switching behavior in oxygen-doped MoS2 is demonstrated. The two-terminal devices exhibit stable light-modulated resistive switching characteristics and optically tunable synaptic properties with an on/off ratio of up to 104. The integrated device with crossbar architecture enables simultaneous image sensing, preprocessing, and storage, thereby increasing the training efficiency and recognition rate of image recognition tasks. This work presents a novel pathway to develop the next generation of light-controlled memory and artificial vision systems for neuromorphic computing.

NANO LETTERS (2023)

No Data Available