Suppression of tin precipitation in SiSn alloy layers by implanted carbon

Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy

(2013) Jay Prakash Gupta et al.   APPLIED PHYSICS LETTERS

GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

(2013) H. H. Tseng et al.   APPLIED PHYSICS LETTERS

Impurity engineering of Czochralski silicon

(2013) Xuegong Yu et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics

(2013) Robert Chen et al.   NANO LETTERS

Tensile-Strained Ge/SiGeSn Quantum Wells for Polarization-Insensitive Electro-Absorption Waveguide Modulators

(2012) Guo-En Chang et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Improvement of photoconductivity in Silicon Tin (SiSn) thin films

(2012) Takehiko Nagai et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

(2011) J. Werner et al.   APPLIED PHYSICS LETTERS

Quasiparticle electronic and optical properties of the Si–Sn system

(2011) Rasmus V S Jensen et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Theoretical gain of strained GeSn0.02/Ge1−x−y′SixSny′ quantum well laser

(2010) Yuan-Hui Zhu et al.   JOURNAL OF APPLIED PHYSICS

Strain-driven defect evolution in Sn+ implanted Si/SiGe multilayer structure

(2009) P.I. Gaiduk et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS