Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4894523
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Funding
- National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2012M3A7B4035323]
- Industrial Strategic Technology Development Program (Development of actinic EUV mask inspection tool and multiple electron beam wafer inspection technology) - Ministry of Trade, Industry and Energy, Republic of Korea [10039226]
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We scrutinize time-resolved processes occurring in atomic-layer etching (ALET) of ultra-thin Al2O3 film using BCl3 gas and Ar neutral beam by employing density functional theory calculations and experimental measurements. BCl3 gas is found to be preferentially chemisorbed on Al2O3(100) in trans form with the surface atoms creating O-B and Al-Cl contacts. We disclose that the most likely sequence of etching events involves dominant detachment of Al-associated moieties at early etching stages in good agreement with our concurrent experiments on tracking Al2O3 surface compositional variations during Ar bombardment. In this etching regime, we find that ALET requires half the maximum reaction energy of conventional plasma etching, which greatly increases if the etching sequence changes. (C) 2014 AIP Publishing LLC.
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