Enhanced passivation at amorphous/crystalline silicon interface and suppressed Schottky barrier by deposition of microcrystalline silicon emitter layer in silicon heterojunction solar cells
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Title
Enhanced passivation at amorphous/crystalline silicon interface and suppressed Schottky barrier by deposition of microcrystalline silicon emitter layer in silicon heterojunction solar cells
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 11, Pages 113901
Publisher
AIP Publishing
Online
2014-03-18
DOI
10.1063/1.4868726
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Note: Only part of the references are listed.- Amorphous/crystalline silicon interface defects induced by hydrogen plasma treatments
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- (2012) Ping-Kuan Chang et al. SOLID-STATE ELECTRONICS
- Current Losses at the Front of Silicon Heterojunction Solar Cells
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- (2011) C. Leendertz et al. APPLIED PHYSICS LETTERS
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- The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality
- (2010) A. Descoeudres et al. APPLIED PHYSICS LETTERS
- Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency
- (2010) I. Santos et al. PHYSICAL REVIEW B
- Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment
- (2010) Andreas Klein et al. Materials
- Nature of doped a-Si:H/c-Si interface recombination
- (2009) Stefaan De Wolf et al. JOURNAL OF APPLIED PHYSICS
- Surface potentials of magnetron sputtered transparent conducting oxides
- (2009) A. Klein et al. THIN SOLID FILMS
- Investigation of gap states in phosphorous-doped ultra-thin a-Si:H by near-UV photoelectron spectroscopy
- (2008) L. Korte et al. JOURNAL OF NON-CRYSTALLINE SOLIDS
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