Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4902969
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Funding
- National Research Foundation of Korea (NRF) grant - Korean Government (MEST) [2011-0028769, 2013-044975]
- Samsung semiconductor research center at Korea University
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In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity. (c) 2014 AIP Publishing LLC.
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