Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4904967
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Funding
- National Program on Key Basic Research Project [2012CB933004]
- National Natural Science Foundation of China [11474293]
- Zhejiang Provincial Natural Science Foundation of China [LY14A040009]
- Ningbo Natural Science Foundation [2014A610145]
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Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO2 nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1V. A resistor-loaded inverter is built, showing a high voltage gain of similar to 8 at a low supply voltage of 1V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics. (C) 2014 AIP Publishing LLC.
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