Article
Chemistry, Multidisciplinary
Abhinav Chandresh, Christof Woell, Lars Heinke
Summary: This study demonstrates the precise deposition of nanoporous metal-organic frameworks on graphene, yielding bilayers with excellent specificity and high sensitivity. This approach can solve the low specificity issue of graphene in sensor applications.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Jaewon Jang
Summary: This study investigates the impact of annealing time of the Y2O3 passivation layer on the electrical properties and bias stabilities of sol-gel-deposited SnO2 thin-film transistors (TFTs). Optimization of the Y2O3 passivation layer improves the field-effect mobility, subthreshold swing, and on/off-current ratio of the SnO2 TFTs. The annealing time also controls the thickness and oxygen-vacancy concentration in the SnO2 channel layer. A thin Y2O3 passivation layer effectively blocks external molecules and enhances the device performance. A 15 min-annealed Y2O3 passivation layer achieves maximum electrical performance and long-term stability.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Ji-Man Yu, Chungryeol Lee, Joon-Kyu Han, Seong-Joo Han, Geon-Beom Lee, Sung Gap Im, Yang-Kyu Choi
Summary: This study successfully applied solid-state polyethylene glycol di-methacrylate (pEGDMA) prepared with initiated chemical vapor deposition (iCVD) to top-gate structured EGTs, achieving a high on/off ratio. By combining with load resistors, the EGTs were also used in various multi-functional logic circuits such as inverters, NAND, and NOR gates, providing stable operation at high frequency and high voltage gain under 1V power supply.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Chemistry, Physical
Xue Chen, Jiaxian Wan, Hao Wu, Chang Liu
Summary: Passivation of oxide-based thin film transistors still poses a challenge due to the need for thermal treatments, which can impact the transistor characteristics. By reducing the growth temperatures of passivation layers, the performance of TFTs can be maintained within an acceptable range. Among all devices, TFTs with Al2O3 PVLs deposited at 100 degrees C using H2O as oxidant exhibit high mobility, proper threshold voltage, low subthreshold swing, and excellent stability.
APPLIED SURFACE SCIENCE
(2021)
Article
Physics, Applied
Kishwar Mashooq, Jaesung Jo, Rebecca L. Peterson
Summary: In this study, an ambipolar SnO inverter with record high gain was demonstrated and the key factors affecting the gain were identified, highlighting the potential of ambipolar SnO TFTs for future high-performance complementary thin film circuits.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Nicolo Lago, Marco Buonomo, Rafael Cintra Hensel, Francesco Sedona, Mauro Sambi, Stefano Casalini, Andrea Cester
Summary: The rise of graphene as an innovative electronic material has led to the study and development of new 2-D materials. Reduced graphene oxide (rGO) has emerged as a simple and cost-effective solution for thin-film transistors (TFTs). This study characterizes liquid-gated ambipolar rGO-TFTs and provides a description of their working principle. By modeling the transistors' off-state conductivity, important parameters were extracted from rGO-TFTs with different levels of electrochemical reduction. The extracted parameters reveal that rGO-TFTs have similar hole and electron mobilities, with the more pronounced p-type behavior attributed to a positive shift in the p-type and n-type threshold voltages.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Multidisciplinary
Ji-Young Go, Gwon Byeon, Taesu Choi, Shuzhang Yang, Wenwu Li, Yong-Young Noh
Summary: This study explores the potential of using an organic salt, N,N-dimethylanilinium tetrakis(pentafluorophenyl)borate, as a dopant for Sn-based perovskite devices. The thin film transistors based on the doped 2D/3D perovskite PEAFASnI(3) show remarkable improvement in hole mobility, with a low subthreshold swing, small sweep hysteresis, and exceptional bias stability. The bulky chemical structure of the dopant prevents it from penetrating the perovskite lattice and provides surface passivation against Sn oxidation.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Yao-Xin Ding, Kun-Wen Huang, Jie-Wen Chen, Hsiao-Hsuan Hsu, Lei-Ying Ying, Bao-Ping Zhang, Zhi-Wei Zheng
Summary: In this study, IGZO synaptic transistors gated by SBEs were fabricated and NH4Br was doped in SBE-based alginate as the gate dielectric. The doping of NH4Br resulted in a high electric-double-layer capacitance for the biopolymer electrolyte, and various synaptic functions were successfully emulated. These findings provide a potential solution for enhancing the performance of synaptic electronics.
JOURNAL OF MATERIALS SCIENCE
(2023)
Article
Materials Science, Multidisciplinary
Rafael Cintra Hensel, Nicola Comisso, Marco Musiani, Francesco Sedona, Mauro Sambi, Andrea Cester, Nicolo Lago, Stefano Casalini
Summary: In this study, coplanar electrolyte-gated transistors (EGTs) based on reduced graphene oxide (rGO) were fabricated with gates modified by electrodeposition of compact or porous Cu coatings (Cu-modified EGTs). The Cu coatings significantly changed the minimum gate voltage, allowing for highly versatile tuning of device signals. Steady measurements and prolonged measurements (>2 hours) were conducted in a NaCl 0.1 M solution using a homemade paper fluidics system. Transient characterization studies showed a potentiometric sensitivity of 1-3 mV with a signal-to-noise ratio (SNR) of 5-10 for both electron and hole transport regimes. The Cu-modified EGTs had a fast response time of 80 ms and successfully monitored emulated action potentials (eAP) with a characteristic frequency of 0.1 Hz.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Engineering, Electrical & Electronic
Xiaowei Feng, Surya Abhishek Singaraju, Hongrong Hu, Gabriel Cadilha Marques, Tongtong Fu, Peter Baumgartner, Daniel Secker, Mehdi B. Tahoori, Jasmin Aghassi-Hagmann
Summary: This study characterized the low-frequency noise of inkjet-printed electrolyte-gated thin-film transistors and identified the dominating noise generation mechanism. Benchmark analysis on the noise level of various thin-film technologies showed that the electrolyte-gating approach effectively reduces transistor noise levels.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Physics, Applied
Hanying Chen, Tianlin Li, Yifei Hao, Anil Rajapitamahuni, Zhiyong Xiao, Stefan Schoeche, Mathias Schubert, Xia Hong
Summary: We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in ferroelectric-gated monolayer graphene. Through the fabrication of monolayer graphene transistors gated by epitaxial (001) Ba0.6Sr0.4TiO3 films, we achieved a field effect mobility of up to 23,000 cm(2)V-1 s(-1). We also discovered that switching ferroelectric polarization can nonvolatilely modulate the resistance and quantum Hall effect in graphene at low temperatures. Using ellipsometry spectroscopy, we extracted the RSO phonon frequencies in Ba0.6Sr0.4TiO3.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Bongho Jang, Junhee Lee, Hongki Kang, Jaewon Jang, Hyuk-Jun Kwon
Summary: The enhanced carrier flow and improved electrical performance at the Au/SnO2 interface are achieved through chloride-based combustion synthesis. The synthesis method enables Cl doping effects and crystalline SnO2 film formation at lower temperatures compared to conventional precursors. The high carrier concentration induced by Cl doping results in thin potential barriers at the metal/semiconductor junction, enabling carrier injection by tunneling. The devices fabricated by combustion synthesis exhibit significantly improved electrical performance, including higher field-effect mobility, lower subthreshold swing, and higher on/off ratio.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2023)
Article
Nanoscience & Nanotechnology
Mari Napari, Tahmida N. Huq, David J. Meeth, Mikko J. Heikkil, Kham M. Niang, Han Wang, Tomi Iivonen, Haiyan Wang, Markku Leskela, Mikko Ritala, Andrew J. Flewitt, Robert L. Z. Hoye, Judith L. MacManus-Driscoll
Summary: High-performance p-type oxide thin film transistors (TFTs) have great potential for semiconductor applications, but often suffer from low hole mobility and high off-state currents. By applying a thin ALD Al2O3 passivation layer on the Cu2O channel and vacuum annealing, the TFT switching characteristics can be improved. Characterization by TEM-EDX and XPS shows that Al2O3 deposition on Cu2O reduces surface and forms a CuAlO2 interfacial layer. This, along with field-effect passivation, leads to improved TFT performance by reducing trap states and electron accumulation in the off-state.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Aimi Syairah Safaruddin, Juan Paolo S. Bermundo, Michael Paul A. Jallorina, Atsuko Yamamoto, Yukiharu Uraoka
Summary: The reliability of solution-processed amorphous indium zinc oxide (a-IZO) thin-film transistors (TFTs) was evaluated using inorganic-organic fluorinated polysilsesquioxane (PSQ:F) passivation layers. The PSQ:F passivation layers exhibited superior barrier property and improved the stability and electrical performance of the devices.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Physics, Applied
Yong Zhang, Chi-Hsin Huang, Kenji Nomura
Summary: This study developed an artificial synaptic device that exhibits tunable and multi-state excitatory and inhibitory responses. By using a dual-gated ambipolar boron-doped SnO thin-film transistor, the device demonstrated dynamic modulation of multi-state potentiation/depression responses in both reconfigurable excitatory and inhibitory modes. Compared to conventional devices, the dual-gated configuration improved the linearity and symmetry of synaptic weight updates and allowed for conduction level tuning. This oxide synaptic transistor shows high potential for energy-efficient multi-input neuromorphic devices.
APPLIED PHYSICS LETTERS
(2022)