Effect of Si substrate on interfacial SiO2 scavenging in HfO2/SiO2/Si stacks

Reduction of interfacial SiO2 at HfO2/Si interface with Ta2O5 cap

(2013) Kazuyoshi Kobashi et al.   JOURNAL OF APPLIED PHYSICS

Reduction of silicon dioxide interfacial layer to 4.6Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si

(2013) A. Nichau et al.   MICROELECTRONIC ENGINEERING

HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks

(2013) Xiuyan Li et al.   THIN SOLID FILMS

Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material

(2012) Naoto Umezawa et al.   APPLIED PHYSICS LETTERS

Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

(2012) Takashi Ando   Materials

Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)

(2011) L.-Å. Ragnarsson et al.   MICROELECTRONIC ENGINEERING

Gate Oxides Beyond SiO2

(2011) Darrell G. Schlom et al.   MRS BULLETIN

Scaling equivalent oxide thickness with flat band voltage (VFB) modulation using in situ Ti and Hf interposed in a metal/high-k gate stack

(2010) Changhwan Choi et al.   JOURNAL OF APPLIED PHYSICS

Reaction of barium oxide threshold voltage tuning layers with SiO2 and HfO2∕SiO2 gate dielectrics

(2008) M. Copel   APPLIED PHYSICS LETTERS