4.6 Article

Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence

Journal

APPLIED PHYSICS LETTERS
Volume 104, Issue 11, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4869295

Keywords

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Funding

  1. Australian Research Council (ARC)
  2. Australian Renewable Energy Agency (ARENA)

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The radiative recombination coefficient B( T) in crystalline silicon is determined for the temperature range 90-363K, and in particular from 270 to 350K with an interval of 10K, where only sparse data are available at present. The band-band absorption coefficient established recently by Nguyen et al. [J. Appl. Phys. 115, 043710 ( 2014)] via photoluminescence spectrum measurements is employed to compute the values of B( T) at various temperatures. The results agree very well with literature data from Trupke et al. [J. Appl. Phys. 94, 4930 ( 2003).] We present a polynomial parameterization describing the temperature dependence of the product of B( T) and the square of the intrinsic carrier density. We also find that B( T) saturates at a near constant value at room temperature and above for silicon samples with relatively low free carrier densities. (C) 2014 AIP Publishing LLC.

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