Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4863750
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- Academia Sinica
- National Science Council of Taiwan, Republic of China
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The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered. (C) 2014 AIP Publishing LLC.
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