Bias-temperature instability in single-layer graphene field-effect transistors
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Title
Bias-temperature instability in single-layer graphene field-effect transistors
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 14, Pages 143507
Publisher
AIP Publishing
Online
2014-10-10
DOI
10.1063/1.4897344
References
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Related references
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- (2012) W. J. Liu et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
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- (2011) Shu-Jen Han et al. IEEE ELECTRON DEVICE LETTERS
- Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
- (2011) Tibor Grasser MICROELECTRONICS RELIABILITY
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- (2010) Vincent E. Dorgan et al. APPLIED PHYSICS LETTERS
- Reassessing the Mechanisms of Negative-Bias Temperature Instability by Repetitive Stress/Relaxation Experiments
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- Low-frequency noise and hysteresis in graphene field-effect transistors on oxide
- (2010) S.A. Imam et al. Micro & Nano Letters
- Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates
- (2009) J.S. Moon et al. IEEE ELECTRON DEVICE LETTERS
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- (2008) Yu-Ming Lin et al. NANO LETTERS
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