Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4862664
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- Research Grants Council (RGC) theme-based research scheme (TRS) of the Hong Kong Special Administrative Region Government [T23-612/12-R]
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We report an investigation of in situ SiNx gate dielectric grown on AlN/GaN heterostructures by metal-organic chemical vapor deposition. It is revealed that the in situ SiNx is Si-rich, with a N/Si ratio of 1.21 and a relatively high effective dielectric constant of similar to 8.3. The 7nm in situ SiNx film exhibited a large resistivity of >10(14) Omega . cm and a breakdown field of 5.7 MV/cm. Furthermore, interface trapping effects in the in situ SiNx/AlN/GaN heterostructures were investigated by frequency dependent conductance analysis. (C) 2014 AIP Publishing LLC.
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