Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure

(2013) Sung-Bum Bae   ETRI JOURNAL

Enhancement in light emission efficiency of Si nanocrystal light-emitting diodes by a surface plasmon coupling

(2012) Chul Huh et al.   APPLIED PHYSICS LETTERS

Low-temperature synthesis of indium tin oxide nanowires as the transparent electrodes for organic light emitting devices

(2011) Yeh Yee Kee et al.   NANOTECHNOLOGY

Polymer light-emitting devices using poly(ethylene oxide) as an electron injecting layer

(2010) M. V. Madhava Rao et al.   Nano-Micro Letters

Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

(2009) Sang-Heon Han et al.   APPLIED PHYSICS LETTERS

Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices

(2009) C. O'Dwyer et al.   Nature Nanotechnology

Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons

(2008) Beak-Hyun Kim et al.   ADVANCED MATERIALS

Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices

(2008) Rui Huang et al.   APPLIED PHYSICS LETTERS

Influence of a Transparent SiCN Doping Layer on Performance of Silicon Nanocrystal LEDs

(2008) Chul Huh et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS