Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4860990
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Funding
- National Natural Science Foundation of China [61177028, 60937001]
- Natural Science Foundation of Jilin province in China [201115028]
- Independent Project of State Key Laboratory on integrated Optoelectronics [IOSKL2012ZZ16]
- Scientific Frontier and Cross Disciplinary Innovation Project of Jilin University in China
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An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized. (C) 2014 AIP Publishing LLC.
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