Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4897636
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Funding
- Natural Science Foundation of China [11475129, 11175133, 51171132, 11375134]
- Foundation from Chinese Ministry of Education [NCET-13-0438, NCET-12-339-0418]
- Hubei Provincial Natural Science Foundation [2012FFA042]
- Nano Research Program of Suzhou City [ZXG2013003]
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N-type WO3 and p-type Si can be assembled into a composite structure called Z-scheme, which is a high efficiency model for overall water splitting. However, due to the existence of Schottky barrier, its relatively low photocurrent density is still a great challenge for application. Here, a modified Z-scheme structure by inserting a W interlayer is presented. A great enhancement of photocurrent density over 10 times is achieved, which can be ascribed to the introduction of the ohmic contacts between W interlayer with both WO3 and Si layers and the elimination of Si-O bands at the interface. (C) 2014 AIP Publishing LLC.
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