Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4870508
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Funding
- National Natural Science Foundation of China [51204214]
- Hunan Provincial Innovation Foundation for Postgraduate [CX2012B04]
- Fundamental Research Funds for the Central Universities of Central South University [2013zzts027]
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Cu2ZnSnS4 thin films have been prepared by the sol-gel sulfurization method on Mo-coated substrates, and the comparative studies between the atmospheric pressure sulfurization and low pressure sulfurization was carried out. The Cu2ZnSnS4 film sulfurized at low pressure exhibits larger grain size, thinner MoS2 layer, and free of SnS secondary phase, but more ZnS on surface. The device efficiency of 4.1% using Cu2ZnSnS4 absorber from atmospheric pressure sulfurization is improved to 5.7% using that from low pressure sulfurization via the boost of open-circuit and fill factor. (C) 2014 AIP Publishing LLC.
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