Article
Optics
J. Mickevic, E. Valkiunaite, Z. Podlipskas, K. Nomeika, S. Nargelas, G. Tamulaitis, Y. C. Chow, S. Nakamura, J. S. Speck, C. Weisbuch, R. Aleksieju
Summary: The dynamics of two distinct bands in non-polar m-plane InGaN/GaN multiple quantum wells (MQWs) were investigated using PL, CL, and DT spectroscopy. The shift in peak emission wavelength with increasing excitation was caused by competition between these bands. DT measurements attributed the high-energy PL band to optical transitions between ground QW states, while the low-energy PL band was associated with recombination of localized carriers. CL measurements confirmed the dispersion of deep localized states and suggested small-scale disorder. PL measurements showed that localized states are highly sensitive to indium content and structural parameters. Temperature-dependent PL studies revealed strong carrier-phonon interaction.
JOURNAL OF LUMINESCENCE
(2023)
Article
Engineering, Electrical & Electronic
Pradip Dalapati, Abdulaziz Almalki, Sultan Alhassan, Saud Alotaibi, Maryam Al Huwayz, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi, Mohamed Henini
Summary: This study investigates the degradation mechanisms of InGaN/GaN multiple quantum well ultraviolet photodetectors (UV-PDs) by utilizing various optical and electrical measurements. The results indicate that the degradation of UV-PDs is primarily caused by newly generated defects.
SENSORS AND ACTUATORS A-PHYSICAL
(2022)
Article
Multidisciplinary Sciences
Zhang Xing, Afroja Akter, Hyun S. Kum, Yongmin Baek, Yong-Ho Ra, Geonwook Yoo, Kyusang Lee, Zetian Mi, Junseok Heo
Summary: This study demonstrates the intraband absorption using InGaN/GaN nanodisks embedded in nanowires. Fourier transform infrared reflection measurement confirms the absorption of photons in the mid-IR regime by the nanodisks at room temperature.
SCIENTIFIC REPORTS
(2022)
Article
Physics, Applied
Zesheng Lv, Jiabing Lu, Haoming Xu, Tianzhi Peng, Quan Wen, Gang Wang, Hao Jiang
Summary: Visible-light field effect phototransistors (FEPTs) with high detectivity and high speed are fabricated using a polarization induced photogate in a simple In0.15Ga0.85N/GaN heterostructure. Experimental results show that the polarization electric field can fully deplete the channel layer and leads to an ultra-low dark current, and the channel conductivity can be significantly promoted with visible-light illumination. Therefore, the FEPT achieves a high visible-light gain and a superhigh shot noise limited specific detectivity, as well as a high speed with rise/fall time of 15 ns/160 ns. These results not only present huge potential in visible-light photodetection, but also provide an insight into the application of polarization effects in wide bandgap semiconductors.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Feng Xie, Yufei Yao, Yan Gu, Zhijia Hu, Benli Yu, Guofeng Yang
Summary: A high-performance InGaN/GaN multiple quantum well p-i-n photodetector with patterned sapphire substrates was fabricated. The detector showed a low dark current density of <2.0 x 10(-10) A/cm(2) at -2 V bias voltage, with a high contrast ratio of photocurrent to dark current over 10(6). Furthermore, the peak responsivity reached 0.18 A/W at -10 V for a wavelength of 395 nm, corresponding to a maximum quantum efficiency of approximately 56%. In addition, the noise equivalent power (NEP) and normalized detectivity were 1.14 x 10(-11) W and 2.77 x 10(11) cm center dot Hz(0.5) center dot W-1, respectively. The high-performance of the photodetector is believed to be due to the high crystalline quality of the InGaN epilayer.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Multidisciplinary
Puspita Paul, Sadhvikas J. Addamane, Peter Qiang Liu
Summary: In this work, ultrastrong coupling between the intersubband transition in a single quantum well and the resonant mode of a photonic nanocavity at room temperature is experimentally demonstrated. Strong coupling between the nanocavity resonance and the second-order intersubband transition in a single quantum well is also observed. Furthermore, intersubband cavity polariton systems are implemented on soft and flexible substrates for the first time, showing that bending of the single quantum well does not significantly affect the characteristics of the cavity polaritons. This work paves the way for expanding the range of potential applications of intersubband cavity polaritons, including soft and wearable photonics.
Article
Physics, Condensed Matter
Bonghwan Kim, Seoung-Hwan Park
Summary: The intersubband scattering rate of strain-compensated InGaN/InAlN quantum well structures was found to be slightly smaller than that of conventional GaN/AlN QW structures. As carrier density increases, the intersubband relaxation time for electron gradually increases, attributed to the larger inverse screening length and increased quasi-Fermi level. The strain-compensated InGaN/InAlN QW structure exhibits a larger relaxation time compared to conventional GaN/AlN QW structures.
SOLID STATE COMMUNICATIONS
(2021)
Article
Nanoscience & Nanotechnology
Bo Meng, Borislav Hinkov, Nolwenn Marie L. Biavan, Hanh T. Hoang, Denis Lefebvre, Maxime Hugues, David Stark, Martin Franckie, Almudena Torres-Pardo, Julen Tamayo-Arriola, Miguel M. Bajo, Adrian Hierro, Gottfried Strasser, Jerome Faist, Jean M. Chauveau
Summary: ZnO-based heterostructures are considered promising candidates for optoelectronic devices in the infrared and terahertz spectral domains due to their unique material properties. Experimental observation has shown that ZnO/MgxZn1-xO quantum cascade structures can exhibit terahertz intersubband electroluminescence, which is significant for the realization of ZnO-based terahertz quantum cascade lasers.
Article
Crystallography
Amalia Fernando-Saavedra, Steven Albert, Ana Bengoechea-Encabo, Achim Trampert, Mengyao Xie, Miguel A. Sanchez-Garcia, Enrique Calleja
Summary: Non-polar m-plane GaN films were grown on & gamma;-LiAlO2 (100) substrates using a two-step process that involved coalescence of GaN nanocolumns obtained from a GaN buffer. Transmission electron microscopy data showed a significant reduction in extended defects density in the coalesced film compared to the initial GaN buffer, likely due to a filter effect during the regrowth process. Low temperature photoluminescence spectra confirmed this reduction in defects, with a decrease in stacking faults emission peaks and a dominant donor-bound excitonic emission at 3.472 eV.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Materials Science, Multidisciplinary
Trang Nguyen, Brandon Dzuba, Yang Cao, Alexander Senichev, Rosa E. Diaz, Michael J. Manfra, Oana Malis
Summary: Mid-infrared intersubband transitions in strain-balanced m-plane (In)AlxGa1-xN/In0.16Ga0.84N (0.19 <= x <= 0.3) multi-quantum wells are reported for the first time in the range of 3.4-5.1 µm (244-360 meV). The experimental intersubband energies are better reproduced by calculations using the local-density approximation than the Hartree-Fock approximation. The effect of charge density, quantum well width, and barrier alloy composition on the intersubband transition energy is investigated to evaluate the potential of this material for practical device applications.
OPTICAL MATERIALS EXPRESS
(2021)
Article
Physics, Applied
Y. C. Chow, C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, J. S. Speck
Summary: Differential carrier lifetime measurements were conducted on c-plane InGaN/GaN LEDs of different QW indium compositions, showing that doped barriers can reduce the internal electric field and improve electron-hole wavefunction overlap. LEDs with higher indium composition demonstrate better performance despite the introduction of more non-radiative recombination centers.
APPLIED PHYSICS LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Jens W. Tomm, Artem Bercha, Grzegorz Muziol, Joachim Piprek, Witold Trzeciakowski
Summary: The analysis of photoluminescence in polar light emitting diode (LED) structures with a 25 nm In0.17Ga0.83N quantum well reveals that the observed emission is likely from a set of closely spaced excited states. The ground state decays very slowly and accumulates long-living charge. However, this charge accumulation can be quantified spectroscopically using short reverse voltage pulses. The emission from excited states is effective and exhibits exponential decay with time constants of 1.5 ns and 8 ns at 6 K and 300 K, respectively, indicating dominance by radiative processes. These findings suggest a potential pathway for improved polar device architectures.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Akanksha Kapoor, Vincent Grenier, Eric Robin, Catherine Bougerol, Gwenole Jacopin, Bruno Gayral, Maria Tchernycheva, Joel Eymery, Christophe Durand
Summary: A dual-color emission is achieved by combining two monolithic sets of core-shell multiple quantum wells (MQWs) grown on GaN microwires, showing blue and green emissions. Advanced structural characterization reveals the growth of two sets of MQWs and their color emission sources on m-plane sidewall surfaces. LED based on these core-shell MQWs can be fabricated with multiple color emission possibilities.
ADVANCED PHOTONICS RESEARCH
(2021)
Article
Chemistry, Multidisciplinary
Minjiang Dan, Gongwei Hu, Jiaheng Nie, Lijie Li, Yan Zhang
Summary: This study investigates the piezo-phototronic effect on near-infrared intersubband absorption in polar GaN/AlN quantum wells, showing that externally applied pressure can lead to a redshift in absorption wavelength and increase sensitivity.
Article
Engineering, Electrical & Electronic
Avinash S. Palmal, Priyavart Parjapat, Bhoopendra Kumar Kushwaha, Kuldip Singh, Manish Mathew
Summary: This work investigates the effects of TMAl injection on the growth of InGaN multi-quantum wells, showing red-shifted emission wavelengths and multi-peak emissions in samples with TMAl injection. AFM images suggest the formation of nanostructures in MQW layers due to TMAl injection.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Che-Yu Liu, Chia-Yen Huang, Pei-Yu Wu, Jhih-Kai Huang, Tsung Sheng Kao, An-Je Zhou, Da-Wei Lin, YewChung Sermon Wu, Chun-Yen Chang, Hao-Chung Kuo
IEEE ELECTRON DEVICE LETTERS
(2016)
Article
Engineering, Electrical & Electronic
Xin Zhao, Alon Vardi, Jesus A. del Alamo
IEEE ELECTRON DEVICE LETTERS
(2017)
Article
Engineering, Electrical & Electronic
Kai Ni, Andrew L. Sternberg, En Xia Zhang, John A. Kozub, Rong Jiang, Ronald D. Schrimpf, Robert A. Reed, Daniel M. Fleetwood, Michael L. Alles, Dale McMorrow, Jianqiang Lin, Alon Vardi, Jesus del Alamo
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2017)
Article
Engineering, Manufacturing
A. Vardi, J. Lin, W. Lu, X. Zhao, A. Fernando-Saavedra, J. A. del Alamo
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
(2017)
Article
Chemistry, Multidisciplinary
Chia-Yen Huang, Jing-Jie Lin, Tsu-Chi Chang, Che-Yu Liu, Tzu-Ying Tai, Kuo-Bin Hong, Tien-Chang Lu, Hao-Chung Kuo
Article
Nanoscience & Nanotechnology
Chia-Yen Huang, Pei-Yu Wu, Kai-Shiang Chang, Yun-Hsiang Lin, Wei-Chih Peng, Yem-Yeu Chang, Jui-Ping Li, Hung-Wei Yen, YewChung Sermon Wu, Hideto Miyake, Hao-Chung Kuo
Article
Nanoscience & Nanotechnology
Chia-Yen Huang, Tzu-Ying Tai, Jing-Jie Lin, Tsu-Chi Chang, Che-Yu Liu, Tien-Chang Lu, Yuh-Renn Wu, Hao-Chung Kuo
Article
Chemistry, Multidisciplinary
Chia-Yen Huang, Tzu-Ying Tai, Kuo-Bin Hong, Hao-Chung Kuo, Tien-Chang Lu
APPLIED SCIENCES-BASEL
(2019)
Article
Physics, Applied
Chia-Yen Huang, Sebastian Walde, Chia-Lung Tsai, Carsten Netzel, Hsueh-Hsing Liu, Sylvia Hagedorn, Yuh-Renn Wu, Yi-Keng Fu, Markus Weyers
JAPANESE JOURNAL OF APPLIED PHYSICS
(2020)
Article
Physics, Applied
Chia-Yen Huang, Chia-Lung Tsai, Cheng-Yao Huang, Rong-Yu Yang, YewChung Sermon Wu, Hung-Wei Yen, Yi-Keng Fu
APPLIED PHYSICS LETTERS
(2020)
Review
Chemistry, Analytical
Chia-Yen Huang, Kuo-Bin Hong, Zhen-Ting Huang, Wen-Hsuan Hsieh, Wei-Hao Huang, Tien-Chang Lu
Summary: This article reviews the key challenges and solutions for III-nitride VCSELs, including polarization effects, DBR fabrication difficulties, and anti-guiding effects. By developing alternative cavity structures and processing technologies, these challenges have been overcome, leading to improved performance of VCSELs.
Article
Physics, Applied
A. Mogilatenko, S. Walde, S. Hagedorn, C. Netzel, C. -y. Huang, M. Weyers
Summary: The defect structure in unintentionally doped and Si-doped AlN layers was compared. The formation of irregular defects can be avoided by introducing Si-doping, which also produces an alternative mechanism for strain relaxation.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Crystallography
Chia-Yen Huang, Sylvia Hagedorn, Sebastian Walde, Chia-Lung Tsai, Yi-Keng Fu, Markus Weyers
Summary: The growth of Si-doped AlN and Al0.63Ga0.37N is investigated, and it is found that the strain state of Si-doped AlN is thickness-dependent, while strain relaxation in thick Al0.63Ga0.37N layers is dominated by the generation of additional dislocations at low dislocation density in the AlN buffer, resulting in a significant increase in threading dislocation density and surface roughness.
JOURNAL OF CRYSTAL GROWTH
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Chia-Yen Huang, Jing-Jie Lin, Tsu-Chi Chang, Che-Yu Liu, Tzu-Ying Dai, Kuo-Bin Hong, Tien-Chang Lu, Hao-Chung Kuo
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
(2017)
Proceedings Paper
Engineering, Electrical & Electronic
Alon Vardi, Jianqiang Lin, Wenjie Lu, Xin Zhao, Jesus A. del Alamo
2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY
(2016)
