Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4817797
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- German Research Foundation (DFG)
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We present results on optimized growth temperatures and layer structure design of high mobility photoconductive Terahertz (THz) emitters based on molecular beam epitaxy grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS). The photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer and with a Golay cell. We measured a THz bandwidth in excess of 4 THz and average THz powers of up to 64 mu W corresponding to an optical power-to-THz power conversion efficiency of up to 2 x 10(-3). (C) 2013 AIP Publishing LLC.
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