Non-equilibrium origin of high electrical conductivity in gallium zinc oxide thin films

Development and application of an instrument for spatially resolved Seebeck coefficient measurements

(2013) Andriy Zakutayev et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

Angle-resolved photoemission and quasiparticle calculation of ZnO: The need fordband shift in oxide semiconductors

(2012) Linda Y. Lim et al.   PHYSICAL REVIEW B

Cation off-stoichiometry leads to highp-type conductivity and enhanced transparency in Co2ZnO4and Co2NiO4thin films

(2012) A. Zakutayev et al.   PHYSICAL REVIEW B

Surface Origin of High Conductivities in UndopedIn2O3Thin Films

(2012) S. Lany et al.   PHYSICAL REVIEW LETTERS

Effects of Ar vs. O2 ambient on pulsed-laser-deposited Ga-doped ZnO

(2011) Robin C. Scott et al.   JOURNAL OF CRYSTAL GROWTH

Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

(2011) D. C. Look et al.   PHYSICAL REVIEW B

Impurity complexes and conductivity of Ga-doped ZnO

(2011) D. O. Demchenko et al.   PHYSICAL REVIEW B

Zn–Ni–Co–O wide-band-gap p-type conductive oxides with high work functions

(2011) A. Zakutayev et al.   MRS Communications

Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedralIn2O3

(2009) P. D. C. King et al.   PHYSICAL REVIEW B

Energetics of quaternary III-V alloys described by incorporation and clustering of impurities

(2009) Koushik Biswas et al.   PHYSICAL REVIEW B

Semiconductor thermochemistry in density functional calculations

(2008) Stephan Lany   PHYSICAL REVIEW B

Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs

(2008) Stephan Lany et al.   PHYSICAL REVIEW B

Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

(2008) Aron Walsh et al.   PHYSICAL REVIEW LETTERS

Grand challenges in basic energy sciences

(2008) Graham R. Fleming et al.   PHYSICS TODAY