Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)
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Title
Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 24, Pages 241915
Publisher
AIP Publishing
Online
2013-12-14
DOI
10.1063/1.4848815
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Related references
Note: Only part of the references are listed.- CVD Growth of Graphene Stacks on 4H-SiC (0001) Surface - X-ray Diffraction and Raman Spectroscopy Study
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- (2010) J. Borysiuk et al. JOURNAL OF APPLIED PHYSICS
- Preparation and examination of multilayer graphene nanosheets by exfoliation of graphite in high efficient attritor mill
- (2010) Péter Kun et al. Open Chemistry
- Transmission electron microscopy and scanning tunneling microscopy investigations of graphene on 4H-SiC(0001)
- (2009) J. Borysiuk et al. JOURNAL OF APPLIED PHYSICS
- Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
- (2009) Konstantin V. Emtsev et al. NATURE MATERIALS
- Epitaxial graphene: the material for graphene electronics
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- (2009) H. Hibino et al. PHYSICAL REVIEW B
- Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
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- (2008) J. Hass et al. PHYSICAL REVIEW LETTERS
- Graphene on Ru(0001): A25×25Supercell
- (2008) D. Martoccia et al. PHYSICAL REVIEW LETTERS
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