4.6 Article

Surface photovoltage analyses of Cu(In,Ga)S2/CdS and Cu(In,Ga)S2/In2S3 photovoltaic junctions

Journal

APPLIED PHYSICS LETTERS
Volume 102, Issue 21, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4807889

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Funding

  1. BMU [0327589A, 0327589B]

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Spectrally dependent surface photovoltage measurements were performed with repetitive regime on Cu(In,Ga)S-2 absorbers and on Cu(In,Ga)S-2/CdS and Cu(In,Ga)S-2/In2S3 junctions. The results are correlated to current-voltage investigations of the respective completed solar cells. The measurements show the presence of a space charge region in the bare Cu(In,Ga)S-2 absorbers due to a high density of surface states. It is found that deposition of CdS increases the band bending whereas deposition of In2S3 does not change it. (C) 2013 AIP Publishing LLC.

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