Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4831783
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Funding
- National Research Foundation of Korea (NRF/MEST) [2012011730, 2013-R1A1A2A10005186]
- National Research Foundation of Korea [2013R1A1A2A10005186, 2012R1A2A2A02011730] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Tantalum (Ta) is suggested to act as an electron donor and crystal phase stabilizer in titanium oxide (TiOx). A transition occurs from an amorphous state to a crystalline phase at an annealing temperature above 300 degrees C in a vacuum ambient. As the annealing temperature increases from 300 degrees C to 450 degrees C, the mobility increases drastically from 0.07 cm(2)/Vs to 0.61 cm(2)/Vs. The remarkable enhancement of thin film transistor performance is suggested to be due to the splitting of Ti 3d band orbitals as well as the increase in Ta5+ ions that can act as electron donors. (C) 2013 AIP Publishing LLC.
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