Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4793995
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Funding
- Ministry of Science, Education, Culture and Sports (MEXT), Govt. of Japan
- Asian office of Aerospace RD, Govt. of USA [FA2386-11-1-0001AOARD104173, FA2386-10-1-4059 AOARD-10-4059]
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We demonstrate that a single brain-neuron-extracted microtubule is a memory-switching element, whose hysteresis loss is nearly zero. Our study shows how a memory-state forms in the nanowire and how its protein arrangement symmetry is related to the conducting-state written in the device, thus, enabling it to store and process similar to 500 distinct bits, with 2 pA resolution between 1 nA and 1 pA. Its random access memory is an analogue of flash memory switch used in a computer chip. Using scanning tunneling microscope imaging, we demonstrate how single proteins behave inside the nanowire when this 3.5 billion years old nanowire processes memory-bits. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793995]
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