Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4824116
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Funding
- National Natural Science Foundation of China [20971123, 21203198, 51002153, 61106004]
- Fujian National Natural Science Foundation of China [2011J01335, 2012J05033]
- NNSF Outstanding Youth Fund [50625205]
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The effect of aluminum doping on the growth of ZnO films on c-plane ZnO (0001) single crystal substrates during metalorganic chemical vapor deposition was investigated. It was found that aluminum doping induces a growth mode of three-dimensional columnar growth. X-ray photoemission spectroscopy demonstrates that partial aluminum is segregated to the growth front. A combined experimental contact angle measurements and theoretical first-principle calculations suggest that the surface energy of the films is promoted by aluminum doping. Besides, aluminum doping also tends to decrease the adatoms diffusion mobility. We conclude that aluminum acts as an antisurfactant element during the homoepitaxial growth, and it increases the difficulty in obtaining high quality n-type ZnO films. (C) 2013 AIP Publishing LLC.
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