GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy

Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy

(2012) S. Sukrittanon et al.   APPLIED PHYSICS LETTERS

Understanding intermediate-band solar cells

(2012) Antonio Luque et al.   Nature Photonics

Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy

(2011) F. Ishikawa et al.   APPLIED PHYSICS LETTERS

The influence of dopant type and carrier concentration on the effective mass and Seebeck coefficient of GaNxAs1−x thin films

(2011) P. Pichanusakorn et al.   APPLIED PHYSICS LETTERS

Engineering the Electronic Band Structure for Multiband Solar Cells

(2011) N. López et al.   PHYSICAL REVIEW LETTERS

Intermediate-band photovoltaic solar cell based on ZnTe:O

(2009) Weiming Wang et al.   APPLIED PHYSICS LETTERS