Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4801972
Keywords
-
Categories
Funding
- Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST)
- NICT Commissioned Research
- Project for Developing Innovation Systems of MEXT
- Grants-in-Aid for Scientific Research [25420352, 23560431] Funding Source: KAKEN
Ask authors/readers for more resources
We have developed high-quality epitaxial NbN/AlN/NbN Josephson tunnel junctions with a wide range of current density J(c). The junctions show excellent tunneling properties with a large gap voltage of 5.6 mV and a large IcRN product of 3.5 mV. The quality factor R-sg/R-N is about 60 for the junctions with a J(c) of 2.2 A/cm(2), and above 10 for the junctions with a J(c) of 25 kA/cm(2). The crystal structures across the junction barrier are investigated using x-ray diffraction and cross-sectional scanning transmission electron microscopy, and demonstrate epitaxial growth of the NbN/AlN/NbN trilayers for the wide range of J(c). (C) 2013 AIP Publishing LLC
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
