Article
Chemistry, Physical
Hongyan Qi, Weixin Wu, Xinqi Chen, Hee Chul Lee
Summary: In this study, BiFeO3/La0.7Sr0.3MnO3 heterostructures were successfully synthesized and stable bipolar resistive switching characteristics regulated by ferroelectric polarization reversal were observed. The conduction mechanism followed the Schottky emission model, and the memristive behavior was explained by the modulation effect on the depletion region width and Schottky barrier height caused by ferroelectric polarization reversal.
Article
Engineering, Electrical & Electronic
Sandeep Vura, Vadivukkarasi Jeyaselvan, Rabindra Biswas, Varun Raghunathan, Shankar Kumar Selvaraja, Srinivasan Raghavan
Summary: The study focuses on the polarization characteristics of BaTiO3 films grown on Si(100) substrates, demonstrating a polarization direction transition from in-plane to out-of-plane by changing the growth temperature. Films grown at 800 degrees Celsius exhibit in-plane polarization at room temperature, while films grown at 600 degrees Celsius with defects exhibit out-of-plane polarization at 500 degrees Celsius.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Physical
Dong Chen, Chun-Lei Wang
Summary: The study demonstrates a strong magnetoelectric coupling in a La0.75Sr0.25MnO3/BaTiO3 superlattice, achieving reversible transitions between ferromagnetism, ferrimagnetism, and antiferromagnetism by controlling the magnitude and spin direction of the Mn magnetic moments.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2021)
Article
Physics, Applied
Yijin Zhang, Rei Taniguchi, Satoru Masubuchi, Rai Moriya, Kenji Watanabe, Takashi Taniguchi, Takao Sasagawa, Tomoki Machida
Summary: In this study, an out-of-plane shift current was observed and electrically controlled in a two-dimensional ferroelectric material. The results are significant for the study of Berry connection physics and the development of optoelectronic devices.
APPLIED PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Yeong Jae Shin, Juan Jiang, Yichen Jia, Frederick J. Walker, Charles H. Ahn
Summary: BaTiO3 exhibits functional properties like high dielectric constant, large Pockels coefficient, and strong ferroelectricity/piezoelectricity, which can be used for various applications including non-volatile memory devices. Synthesis of BaTiO3 thin films by molecular beam epitaxy allows for growth of coherently strained and ferroelectric BaTiO3 at low temperatures, paving the way for large-scale integration with mainstream electronics platforms. Experimental results demonstrate surface mobility of BaO and TiO2 adatoms conducive to ferroelectric crystal growth at low temperatures.
Article
Chemistry, Physical
Rui Li, Guoqiang Zhang, Yingtao Wang, Zhangwen Lin, Chuanxin He, Yongliang Li, Xiangzhong Ren, Peixin Zhang, Hongwei Mi
Summary: This study introduces a tin oxide/barium titanate heterostructure encapsulated in nitrogen-doped carbon nanofibers as a sodium ion battery anode, and utilizes the ferroelectric and piezoelectric effect to boost the rate performance of the anode.
Article
Chemistry, Inorganic & Nuclear
Chang-Chun Fan, Cheng-Dong Liu, Bei-Dou Liang, Ming-Liang Jin, Tong-Yu Ju, Chao-Yang Chai, Xiang-Bin Han, Wen Zhang
Summary: A novel two-dimensional lead bromide perovskite ferroelectric with an out-of-plane polarization was synthesized by a rigid-to-flexible cation tailoring strategy. This material has the potential to miniaturize vertical-sandwich-type ferroelectric optoelectronic devices. The integration of out-of-plane ferroelectricity and excellent photoelectric properties provides a promising platform for investigating ferroelectricity-related effects in vertical optoelectronic devices.
INORGANIC CHEMISTRY
(2023)
Article
Materials Science, Multidisciplinary
Tianyuan Zhu, Shiqing Deng, Shi Liu
Summary: Ferroelectric memories have seen a resurgence due to the discovery of ferroelectricity in HfO2-based nanometer-thick films. These films have excellent silicon compatibility and overcome the challenges faced by perovskite ferroelectrics in high-density integrated circuits. The exact phase responsible for ferroelectricity in hafnia films is still debated, but researchers have used computational methods to identify specific epitaxial conditions that thermodynamically favor the polar Pca21 phase. The strain-stability phase diagrams help resolve discrepancies between experiments and theory and can guide the improvement of ferroelectric properties in epitaxial hafnia thin films.
Article
Nanoscience & Nanotechnology
Adriana Augurio, Alberto Alvarez-Fernandez, Vishal Panchal, Bede Pittenger, Peter De Wolf, Stefan Guldin, Joe Briscoe
Summary: This study reports the preparation of porous barium titanate (pBTO) thin films using a soft template-assisted sol-gel method, and the control of porosity by different organic/inorganic ratios. The research shows that ferroelectric polarization is retained in the porous structures, and the presence of porosity leads to an improvement in PEC response.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Applied
N. V. Sarath, Amit Chauhan, Jatin Kumar Bidika, Subhajit Pal, B. R. K. Nanda, P. Murugavel
Summary: This study proposes a novel lead-free ferroelectric material, (1-x)BTO - xBi(Ni2/3Nb1/3)O-3, which is demonstrated to reduce the bandgap without compromising the polarization. By varying the composition from x = 0.0 to 0.05, the bandgap is reduced from 3.1 to 2.4 eV. The optimal composition, chi = 0.02, exhibits enhanced polarization and anomalous photovoltaic response at room temperature, with an open-circuit voltage of 6 V at 300 K. The origin of the bandgap reduction and polarization retention is explored experimentally and analyzed theoretically.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Chemistry, Multidisciplinary
Guohua Dong, Yue Hu, Changqing Guo, Haijun Wu, Haixia Liu, Ruobo Peng, Dan Xian, Qi Mao, Yongqi Dong, Yanan Zhao, Bin Peng, Zhiguang Wang, Zhongqiang Hu, Junwei Zhang, Xueyun Wang, Jiawang Hong, Zhenlin Luo, Wei Ren, Zuo-Guang Ye, Zhuangde Jiang, Ziyao Zhou, Houbing Huang, Yong Peng, Ming Liu
Summary: This study presents a method for preparing self-assembled, epitaxial, ferroelectric nanosprings and demonstrates their super-scalability and full recovery capability.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Physical
Min Zhang, Chaoyong Deng
Summary: The evolution of dynamic hysteresis with electrical field amplitude and frequency in BTO single crystal films prepared by PLD was systematically investigated. A noticeable transition from low-frequency to high-frequency behavior was observed, with domain motion frequency dependence identified as the cause of the dynamic hysteresis loop scaling behavior.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Physics, Applied
Joshua Mayersky, Rashmi Jha, Amber Reed
Summary: This paper reports the true ferroelectric characteristics of BTO as a function of temperature and interface charge density at the BTO/Nb:STO interface. It is found that the average remanent polarization of BTO decreases with increasing temperature. The activation energy and trapping at the interface under positive and negative ferroelectric polarization states are also characterized.
APPLIED PHYSICS LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Xiong Deng, Chao Chen, Deyang Chen, Xiangbin Cai, Xiaozhe Yin, Chao Xu, Fei Sun, Caiwen Li, Yan Li, Han Xu, Mao Ye, Guo Tian, Zhen Fan, Zhipeng Hou, Minghui Qin, Yu Chen, Zhenlin Luo, Xubing Lu, Guofu Zhou, Lang Chen, Ning Wang, Ye Zhu, Xingsen Gao, Jun-Ming Liu
Summary: By tailoring the gradual strain relaxation of an interface layer, continuous tunable epitaxial strain beyond substrate limitations in oxide heterostructures is achieved, providing a platform for creating exotic phases and emergent phenomena.
Article
Chemistry, Multidisciplinary
Jamal Belhadi, Urska Gabor, Hana Ursic, Nina Daneu, Jieun Kim, Zishen Tian, Gertjan Koster, Lane W. Martin, Matjaz Spreitzer
Summary: Epitaxial thin films of 0.67Pb(Mg1/3Nb2/3)O-3-0.33PbTiO3/SrRuO3 heterostructures were obtained on SrTiO3 and ReScO3 substrates using pulsed-laser deposition, demonstrating high-quality and single-phase thin films with excellent functional properties.
Article
Materials Science, Multidisciplinary
Yunwei Sheng, Huan Tan, Alberto Quintana, Mario Villa, Jaume Gazquez, Ignasi Fina, Josep Fontcuberta
Summary: We report on the photovoltaic response of ferroelectric hexagonal LuMnO3 films using vertical capacitors, and find that the presence of electrodes crucially determines the sensitivity of short circuit current density to the ferroelectric polarization direction. Using ultrathin Pt top electrodes allows for a large short circuit current density, but polarization back-switching washes out the dependence on polarization direction.
Article
Chemistry, Physical
Huan Tan, Jike Lyu, Yunwei Sheng, Pamela Machado, Tingfeng Song, Akash Bhatnagar, Mariona Coll, Florencio Sanchez, Josep Fontcuberta, Ignasi Fina
Summary: Piezoelectric force microscopy (PFM) is a powerful tool to study ferroelectric materials, but extrinsic effects from surface charges often complicate the data interpretation. In this study, we determined the compensating voltage for different ferroelectric materials by comparing with the corresponding I-V characteristics. We found that the asymmetry of the I-V characteristics is related to the sign and magnitude of the bias voltage required to compensate for surface charges.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Multidisciplinary
Tingfeng Song, Romain Bachelet, Guillaume Saint-Girons, Ignasi Fina, Florencio Sanchez
Summary: By using an ultrathin seed layer, high-quality epitaxial films of orthorhombic Hf0.5Zr0.5O2 can be obtained at a lower temperature, and they exhibit enhanced endurance.
Article
Physics, Applied
Yunwei Sheng, Mathieu Mirjolet, Mario Villa, Jaume Gazquez, Jose Santiso, Andreas Klein, Jordi Fraxedas, Josep Fontcuberta
Summary: Epitaxial LaFeO3-based photocells with different thicknesses were grown on LSAT single-crystal substrates, using LSMO and Pt/BLSO electrodes, to determine their photoresponse. The short-circuit photocurrent initially increases and then decreases with LFO thickness, and is larger or smaller with Pt or BLSO electrodes. The open-circuit voltage shows the opposite trend, being smaller or larger with Pt and BLSO, respectively, consistent with the electronic band alignments and rectifying character of the dark current-voltage data. The complex microstructure and grain boundaries of the films play a significant role in the observed responsivity, which is larger than in similar LFO-based structures.
PHYSICAL REVIEW APPLIED
(2023)
Article
Physics, Applied
J. W. Adkins, I. Fina, F. Sanchez, S. R. Bakaul, J. T. Abiade
Summary: In this study, the influence of controllable polarization reversal and built-in electric fields on pyroelectric and electrocaloric effects in a BaTiO3 thin film is examined using a modified indirect method. It is found that the magnitude of the sample's change in polarization with temperature is sensitive to the degree of polarization reversal. The pyroelectric response is small at low fractions of switched polarization and grows larger with higher fractions of reversal. This is attributed to the destabilizing effect of the internal built-in field on low fractions of switched polarization.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Inorganic & Nuclear
Jhonatan R. Guarin, Carlos Frontera, Judith Oro-Sole, Jaume Gazquez, Clemens Ritter, Josep Fontcuberta, Amparo Fuertes
Summary: Europium tantalum perovskite oxynitrides were successfully prepared by a new high-temperature solid-state synthesis method. The crystal structure and magnetic properties of the materials can be tuned by different reactant mixtures and gas atmospheres. Among them, Eu3Ta3O3.66N5.34 is the first example of a triple perovskite oxynitride.
INORGANIC CHEMISTRY
(2023)
Article
Nanoscience & Nanotechnology
Jose P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Begon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Iniguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sanchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Summary: Ferroelectric hafnium and zirconium oxides have shown significant progress in ultralow-power electronic systems, but technical limitations still hinder their application. This article aims to provide a comprehensive overview of the current state, challenges, and prospects for the development of these materials, with the collaboration of experts from different fields.
Article
Engineering, Electrical & Electronic
Alberto Quintana, Carlos Zarco, Nico Dix, Florencio Sanchez, Ignasi Fina, Josep Fontcuberta
Summary: Flexible FeRh films of high crystalline quality can be synthesized by using mica as a substrate, followed by a mechanical exfoliation of the mica, which display a sharp antiferromagnetic to ferromagnetic phase transition. The films exhibit two distinguishable resistance states that can be written after a field-cooling procedure, and the memory states are robust under magnetic fields of up to 10 kOe.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Huan Tan, Tingfeng Song, Nico Dix, Florencio Sanchez, Ignasi Fina
Summary: The piezoelectric response in doped ferroelectric HfO2 polycrystalline films has been investigated. The lack of texture in most films hinders a thorough understanding. Epitaxial films enable modification of the ferroelectric phase ratio and crystallographic orientation, providing further insight into the piezoelectric response. The magnitude of the in-plane and out-of-plane piezoelectric responses is mainly governed by the orthorhombic phase and the polar axis of the polarization along the probing direction.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Engineering, Electrical & Electronic
Xiao Long, Huan Tan, Florencio Sanchez, Ignasi Fina, Josep Fontcuberta
Summary: The recent discovery of ferroelectricity in doped HfO2 has opened possibilities for the development of memristors based on ferroelectric switching. In this study, ferroelectricity and significant electro-resistance were observed in Hf0.5Zr0.5O2 tunnel junctions grown on Si. After a soft breakdown, where the resistance decreased by five orders of magnitude, ferroelectricity and electroresistance were still observed.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Physics, Applied
Tingfeng Song, Veniero Lenzi, Jose P. B. Silva, Luis Marques, Ignasi Fina, Florencio Sanchez
Summary: The influence of stress and strain on the stabilization of polar phases and ferroelectric properties is investigated in polycrystalline ferroelectric HfO2 films. Experimental and computational results reveal that stress plays a critical role in the stabilization of the orthorhombic phase and ferroelectric polarization, while lattice deformation effects are relatively small.
APPLIED PHYSICS REVIEWS
(2023)
Article
Nanoscience & Nanotechnology
Tingfeng Song, Panagiotis Koutsogiannis, Cesar Magen, Jose A. Pardo, Florencio Sanchez, Ignasi Fina
Summary: Ferroelectric hafnia is a promising material for non-volatile memory devices, and interface engineering with ZrO2 capping layer can improve its functional properties by reducing defects and interface capacitance contribution.
ADVANCED ELECTRONIC MATERIALS
(2023)
