Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48

Molecular Doping and Band-Gap Opening of Bilayer Graphene

(2013) Alexander J. Samuels et al.   ACS Nano

Surface transfer doping of hydrogen-terminated diamond by C60F48: Energy level scheme and doping efficiency

(2012) M. T. Edmonds et al.   JOURNAL OF CHEMICAL PHYSICS

Doping efficiency and energy-level scheme in C60F48-doped zinc–tetraphenylporphyrin films

(2012) Yaou Smets et al.   ORGANIC ELECTRONICS

Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide

(2012) J. Ristein et al.   PHYSICAL REVIEW LETTERS

Quasi-Free-Standing Epitaxial Graphene on SiC (0001) by Fluorine Intercalation from a Molecular Source

(2011) Swee Liang Wong et al.   ACS Nano

Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond

(2011) M. T. Edmonds et al.   APPLIED PHYSICS LETTERS

Highly p-doped epitaxial graphene obtained by fluorine intercalation

(2011) Andrew L. Walter et al.   APPLIED PHYSICS LETTERS

Illuminating the dark corridor in graphene: Polarization dependence of angle-resolved photoemission spectroscopy on graphene

(2011) Isabella Gierz et al.   PHYSICAL REVIEW B

Charge transfer between epitaxial graphene and silicon carbide

(2010) Sergey Kopylov et al.   APPLIED PHYSICS LETTERS

Surface transfer hole doping of epitaxial graphene using MoO3 thin film

(2010) Zhenyu Chen et al.   APPLIED PHYSICS LETTERS

Band Gap Opening of Bilayer Graphene by F4-TCNQ Molecular Doping and Externally Applied Electric Field

(2010) Xiaoqing Tian et al.   JOURNAL OF PHYSICAL CHEMISTRY B

Quantum oscillations and quantum Hall effect in epitaxial graphene

(2010) Johannes Jobst et al.   PHYSICAL REVIEW B

Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping

(2010) C. Coletti et al.   PHYSICAL REVIEW B

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

(2009) Konstantin V. Emtsev et al.   NATURE MATERIALS

Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

(2009) C. Riedl et al.   PHYSICAL REVIEW LETTERS

The electronic properties of graphene

(2009) A. H. Castro Neto et al.   REVIEWS OF MODERN PHYSICS

Atomic Hole Doping of Graphene

(2008) Isabella Gierz et al.   NANO LETTERS

Characterization of graphene through anisotropy of constant-energy maps in angle-resolved photoemission

(2008) M. Mucha-Kruczyński et al.   PHYSICAL REVIEW B

Metal to Insulator Transition in Epitaxial Graphene Induced by Molecular Doping

(2008) S. Y. Zhou et al.   PHYSICAL REVIEW LETTERS