4.6 Article

Highly uniform bipolar resistive switching characteristics in TiO2/BaTiO3/TiO2 multilayer

Journal

APPLIED PHYSICS LETTERS
Volume 103, Issue 26, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4852695

Keywords

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Funding

  1. NSFC [10902128, 10732100, 50802026, 10972239, 11072070]
  2. Fundamental Research Funds for the Central Universities
  3. New Century Excellent Talents in University
  4. Research Fund for the Doctoral Program of Higher Education
  5. Fok Ying Tung Foundation
  6. Science and Technology Innovation Project of Guangdong Provincial Education Department
  7. Guangdong Natural Science Funds for Distinguished Young Scholar

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Nanoscale multilayer structure TiO2/BaTiO3/TiO2 has been fabricated on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO2/BaTiO3/TiO2/Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO2 play a crucial role in the resistive switching phenomenon and the introduced TiO2/BaTiO3 interfaces result in the high uniformity of bipolar resistive switching characteristics. (C) 2013 AIP Publishing LLC.

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