4.6 Article

Recovery of the chemical ordering in L10 MnAl epitaxial thin films irradiated by 2 MeV protons

Journal

APPLIED PHYSICS LETTERS
Volume 102, Issue 10, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4794804

Keywords

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Funding

  1. DTRA [HDTRA 1-11-1-0024]
  2. DARPA [HR0011-09-C-0023]
  3. NSF [948138]

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Epitaxial MnAl films with a high chemical ordering were synthesized and characterized during a series of irradiations by 2 MeV protons (H+). The chemical ordering was first reduced to a minimum at a total fluence (TF) of 1 x 10(15) H+/cm(2), and consequently was recovered at the final total fluence of 2 x 10(15) H+/cm(2). We attributed the recovery of chemical ordering to thermal effects and the enhanced diffusion caused by the high energy protons. In addition, the damages by the protons have little effect on the magnetic scattering processing in MnAl characterized by the anomalous Hall effect. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794804]

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