Type-II InP-based lasers emitting at 2.55 μm

Room-temperature lasing at 2.55 mu m is reported for InP-based GaInAs/GaAsSb type-II quantum well lasers in pulsed mode up to 42 degrees C. This record long-wavelength lasing has become feasible by implementing compressive strain in both materials and a carrier confinement design using an AlAsSb/AlGaInAs electron/hole blocking layer. The device concept appears promising for extending the wavelength range further towards 3 mu m. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679378]