Eliminating the fine structure splitting of excitons in self-assembled InAs/GaAs quantum dots via combined stresses

Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1−xAs and InxGa1−xAs/GaAs quantum dots

(2011) J. D. Plumhof et al.   PHYSICAL REVIEW B

Exciton Polarization, Fine-Structure Splitting, and the Asymmetry of Quantum Dots under Uniaxial Stress

(2011) Ming Gong et al.   PHYSICAL REVIEW LETTERS

Vertical electric field tuning of the exciton fine structure splitting and photon correlation measurements of GaAs quantum dot

(2010) S. Marcet et al.   APPLIED PHYSICS LETTERS

Electric-field-induced coherent coupling of the exciton states in a single quantum dot

(2010) A. J. Bennett et al.   Nature Physics

Lower Bound for the Excitonic Fine Structure Splitting in Self-Assembled Quantum Dots

(2010) Ranber Singh et al.   PHYSICAL REVIEW LETTERS

Effect of atomic-scale randomness on the optical polarization of semiconductor quantum dots

(2009) Vladan Mlinar et al.   PHYSICAL REVIEW B

Electronic excitations in nanostructures: an empirical pseudopotential based approach

(2008) Gabriel Bester   JOURNAL OF PHYSICS-CONDENSED MATTER

Highly Reduced Fine-Structure Splitting inInAs/InPQuantum Dots Offering an Efficient On-Demand Entangled 1.55-μmPhoton Emitter

(2008) Lixin He et al.   PHYSICAL REVIEW LETTERS