Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 16, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.3699227
Keywords
amorphous state; antimony compounds; elastic moduli; germanium compounds; phase change materials; thin films; X-ray diffraction
Categories
Funding
- Intel Corporation
- Semiconductor Research Corporation [2009-VJ-1996]
- National Science Foundation [CBET-0853350]
- Office of Naval Research (ONR) [N00014-09-1-0296-P00004]
- Stanford Nanofabrication Facility (SNF)
- Stanford Nanocharacterization Laboratory (SNL)
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [853350] Funding Source: National Science Foundation
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The mechanical properties of phase-change materials including Ge2Sb2Te5 (GST) are strongly influenced by the complex interaction of phase and imperfection distributions, especially at film thicknesses relevant for phase-change memory devices. This work uses a micromechanical resonator as a substrate to study the phase dependent modulus of GST films with thicknesses from 25 nm to 350 nm. The moduli of amorphous GST and crystalline GST films increase with decreasing thickness to 10 GPa and up to 60 GPa, respectively. The phase purity is studied using X-ray diffraction and energy dissipation data, which provide qualitative information about inelastic absorption. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3699227]
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