Chemical diffusion: Another factor affecting the magnetoresistance ratio in Ta/CoFeB/MgO/CoFeB/Ta magnetic tunnel junction

The perpendicular anisotropy of Co40Fe40B20 sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junction

(2011) W. X. Wang et al.   APPLIED PHYSICS LETTERS

Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions

(2011) D. C. Worledge et al.   APPLIED PHYSICS LETTERS

Annealing effects on the magnetic dead layer and saturation magnetization in unit structures relevant to a synthetic ferrimagnetic free structure

(2011) Soo Young Jang et al.   JOURNAL OF APPLIED PHYSICS

Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co20Fe60B20-MgO structure

(2011) M. Yamanouchi et al.   JOURNAL OF APPLIED PHYSICS

Low current density induced spin-transfer torque switching in CoFeB–MgO magnetic tunnel junctions with perpendicular anisotropy

(2011) H Meng et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Effect of annealing and applied bias on barrier shape in CoFe/MgO/CoFe tunnel junctions

(2011) Yuzi Liu et al.   PHYSICAL REVIEW B

Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

(2008) S. Ikeda et al.   APPLIED PHYSICS LETTERS