Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method

Title
Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 2, Pages 023506
Publisher
AIP Publishing
Online
2012-01-11
DOI
10.1063/1.3675876

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