Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4722928
Keywords
-
Categories
Funding
- National Research Laboratory [R0A-2007-000-20026-0]
- National Research Foundation of Korea (NRF) [2010-0019103, 2010-0022040]
- MEST Korea
- National Research Foundation of Korea [R0A-2007-000-20026-0, 2010-0022040] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
We investigated the correlation between the ferromagnetism and electric resistivity of Mo-doped (3-10 at. %) In2O3 films. We find that the saturation magnetization increases with the Mo concentration until it reaches its maximum at 7 at. % Mo doping (7.1 emu/cm(3)), after which it rapidly decreases upon higher doping concentration. Interestingly, the resistivity reveals opposite behavior with the Mo concentration, showing a minimum value at 7 at. % Mo doping. According to the temperature-dependent resistivity and the Hall effect measurements, we find that the samples with higher magnetization show metallic behavior with higher electron concentration. Notably, the samples show a linear relationship between the carrier concentration and the degree of magnetization. We believe the ferromagnetism in Mo-doped In2O3 is ascribed to the indirect exchange interaction mediated by the charge carriers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4722928]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available