Article
Nanoscience & Nanotechnology
Maria Blanco-Rey, Paolo Perna, Adrian Gudin, Jose Manuel Diez, Alberto Anadon, Pablo Olleros-Rodriguez, Leticia de Melo Costa, Manuel Valvidares, Pierluigi Gargiani, Alejandra Guedeja-Marron, Mariona Cabero, Maria Varela, Carlos Garcia-Fernandez, Mikhail M. Otrokov, Julio Camarero, Rodolfo Miranda, Andres Arnau, Jorge Cerda
Summary: The research indicates that nanometer-thick epitaxial Co films intercalated between graphene and a heavy metal substrate exhibit large perpendicular magnetic anisotropy, with stable magnetic behavior achieved through the optimization of structural defects.
ACS APPLIED NANO MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Liang Liu, Chenghang Zhou, Xinyu Shu, Changjian Li, Tieyang Zhao, Weinan Lin, Jinyu Deng, Qidong Xie, Shaohai Chen, Jing Zhou, Rui Guo, Han Wang, Jihang Yu, Shu Shi, Ping Yang, Stephen Pennycook, Aurelien Manchon, Jingsheng Chen
Summary: An out-of-plane spin-orbit torque (SOT) has been observed in an HM/FM bilayer of CuPt/CoPt, referred to as 3m torque, allowing for field-free switching of perpendicular magnetization of the CoPt layer. The 3m torque depends strongly on the relative orientation of current flow and crystal symmetry, and shows good endurance in cycling experiments. Experiments with various SOT bilayers featuring low-symmetry point groups at the interface may reveal further unconventional spin torques in the future.
NATURE NANOTECHNOLOGY
(2021)
Article
Physics, Applied
Wenxing Lv, Hongwei Xue, Jialin Cai, Qian Chen, Baoshun Zhang, Zongzhi Zhang, Zhongming Zeng
Summary: Recent studies have shown that two-dimensional transition metal dichalcogenides have the potential to generate strong spin-orbit torques for manipulating magnetic devices. In WTe2/ferromagnet structures, an enhancement of spin-orbit torque efficiency is observed with increasing WTe2 thickness, potentially due to spin absorption at the WTe2/Ta interface and the spin Hall effect.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Younghak Kim, Wonmin Jeong, Deokhyun Yun, Gwang-Eun Ahn, OukJae Lee
Summary: The article discusses the application of spin electronic devices in future computer systems, as well as the spin-orbit torque devices and perpendicular magnetic anisotropy materials system's spin interaction research, to enhance our understanding of interfacial PMA and lay the foundation for the development of reliable high-performance spin memory and logic devices.
APPLIED SURFACE SCIENCE
(2021)
Article
Physics, Applied
Akira Musha, Nozomi Soya, Tenghua Gao, Takashi Harumoto, Kazuya Ando
Summary: By tuning the oxidation level, both perpendicular magnetic anisotropy and spin-orbit torques at oxidized Al/Co interfaces can be maximized, and they are positively correlated, indicating a common underlying mechanism.
APPLIED PHYSICS LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Seongjin Park, Kyung Jae Lee, Sang Hoon Lee, Xinyu Liu, Margaret Dobrowolska, Jacek K. Furdyna
Summary: The study reports the observation of current induced spin-orbit torque switching in a (Ga,Mn)(As,P) film with perpendicular magnetic anisotropy. The effective SOI fields corresponding to the SOT were measured, revealing the values of the Dresselhaus and Rashba SOI fields. The observed ratio between Dresselhaus-type and Rashba SOI fields is similar to a previous study in a GaMnAs film with in-plane magnetic anisotropy.
Article
Chemistry, Multidisciplinary
Baoshan Cui, Zengtai Zhu, Chuangwen Wu, Xiaobin Guo, Zhuyang Nie, Hao Wu, Tengyu Guo, Peng Chen, Dongfeng Zheng, Tian Yu, Li Xi, Zhongming Zeng, Shiheng Liang, Guangyu Zhang, Guoqiang Yu, Kang L. Wang
Summary: The use of spin-orbit torques (SOTs) in heavy metal / ferromagnetic metal structures has the potential to revolutionize low-power and high-density spintronic memory and logic applications. This research investigates the possibility of field-free SOT switching by introducing structural asymmetry through wedging the ferromagnetic metal layer. The results demonstrate that the efficiency of SOT switching is sensitive to the heavy metal / ferromagnetic metal interface and the thickness of the ferromagnetic layer. These findings suggest that deterministic field-free switching can be achieved by combining symmetry breaking and materials design.
Article
Physics, Applied
Suhyeok An, Jin-A Kim, Soobeom Lee, Ki-Seung Lee, Chun-Yeol You
Summary: In a system with perpendicular magnetic anisotropy (PMA), magnetization switching induced by spin-orbit torque (SOT) has the advantages of high speed and stability, but additional in-plane directional symmetry breaking is needed for deterministic switching. We observed all-electric magnetization switching by SOT in a conventional heavy metal/ferromagnetic structure on a 3.25 degrees miscut sapphire substrate. Through azimuthal angle-dependent PMA analysis and micromagnetic simulations, we found that a slant PMA, tilted slightly in the direction of the miscut step, is the origin of the field-free switching.
APPLIED PHYSICS LETTERS
(2023)
Article
Crystallography
Zhenxian Zhao, Xiaocha Wang, Wenbo Mi
Summary: The discovery of ferromagnetic two-dimensional (2D) materials provides reference value for the exploration of low-dimensional magnetism and new spintronic devices. The VSi2N4 monolayer is a new 2D material in the field of spintronics, which is ferromagnetic with half-metallic characteristics. The electronic structure and magnetic anisotropy of two-dimensional VSi2X2N2 (X = P, As, Sb, Bi) Janus monolayers are systematically studied via first-principles calculations. The results show that VSi2P2N2, VSi2As2N2, and VSi2Bi2N2 are magnetic, while VSi2Sb2N2 is nonmagnetic. These data provide basic theoretical guidance for the development of low-dimensional spintronic devices.
Article
Nanoscience & Nanotechnology
Quanjun Pan, Yuting Liu, Hao Wu, Peng Zhang, Hanshen Huang, Christopher Eckberg, Xiaoyu Che, Yingying Wu, Bingqian Dai, Qiming Shao, Kang L. Wang
Summary: The research demonstrates a method to achieve efficient current-induced magnetization switching at room temperature, and shows that the energy efficiency of topological insulators is at least an order of magnitude larger than those found in heavy metals. Successful high-quality integration of perpendicularly magnetized CoFeB/MgO system with topological insulators is achieved through the use of a Mo insertion layer.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Physics, Applied
Mengxi Wang, Meiling Li, Yunhao Lu, Xiaoguang Xu, Yong Jiang
Summary: This study investigates the influence of strain effect on perpendicular exchange bias (PEB) and proposes a magnetic random access memory (MRAM) device structure based on strain-mediated PEB. The results show that the exchange bias field (H-ex) can be regulated by the strain effect introduced by the piezoelectric substrate, indicating the controllability of PEB. Furthermore, the proposed MRAM device enables field-free magnetization switching driven by pure strain.
APPLIED PHYSICS LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Yuhang Song, Zhiming Dai, Long Liu, Jinxiang Wu, Tingting Li, Xiaotian Zhao, Wei Liu, Zhidong Zhang
Summary: This study proposes a method to achieve field-free switching using the spin Hall effect, and realizes the switching of magnetic memory by the cooperation of electrons polarized in the z direction and electrons polarized in the y direction. By depositing heavy metals on the magnetic tunnel junction, read-write separation and deterministic switching can be achieved based on SOT.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Zishuang Li, Yining Fei, Lina Chen, Xiang Zhan, Liupeng Yang, Chunjie Yan, Wenqiang Wang, Kaiyuan Zhou, Haotian Li, Fusheng Ma, Tiejun Zhou, Youwei Du, Ronghua Liu
Summary: This study investigates the potential of perpendicular synthetic ferrimagnet (pSFi) as a free layer to optimize memory devices for high storage density and low-energy consumption. The dependence of exchange-coupling strength on the thickness of the Ru spacer and current-induced magnetization reversal due to spin-orbit torque are analyzed. The results reveal an oscillating interlayer exchange coupling and simultaneous magnetization switching of top and bottom layers due to a combination of spin-orbit torque and interlayer exchange torque. The study also estimates the efficiency of spin-orbit torque and the effective spin Hall angle.
Article
Physics, Applied
Takanori Shirokura, Pham Nam Hai
Summary: This paper demonstrates the potential underestimation or overestimation of spin orbit torque from low field second harmonic data due to various thermal effects. A generalized angle resolved second harmonic technique is proposed to accurately estimate SOT in strong perpendicular magnetic anisotropy systems by separating it from thermal contributions.
APPLIED PHYSICS LETTERS
(2021)
Article
Multidisciplinary Sciences
Shuai Hu, Ding-Fu Shao, Huanglin Yang, Chang Pan, Zhenxiao Fu, Meng Tang, Yumeng Yang, Weijia Fan, Shiming Zhou, Evgeny Y. Tsymbal, Xuepeng Qiu
Summary: Deterministic and field-free switching is demonstrated in a Ni/Co multilayer by exploiting the magnetic spin Hall effect in adjacent Mn3Sn, which is essential for low-power spintronics.
NATURE COMMUNICATIONS
(2022)
Article
Physics, Multidisciplinary
M. Tahir, P. M. Krstajic, P. Vasilopoulos
Article
Nanoscience & Nanotechnology
M. Tahir
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2018)
Article
Nanoscience & Nanotechnology
Li Wang, Merranda Schmid, Zach N. Nilsson, Muhammad Tahir, Hua Chen, Justin B. Sambur
ACS APPLIED MATERIALS & INTERFACES
(2019)
Article
Chemistry, Multidisciplinary
Taimur Ahmed, Sruthi Kuriakose, Sherif Abbas, Michelle J. S. Spencer, Md Ataur Rahman, Muhammad Tahir, Yuerui Lu, Prashant Sonar, Vipul Bansal, Madhu Bhaskaran, Sharath Sriram, Sumeet Walia
ADVANCED FUNCTIONAL MATERIALS
(2019)
Article
Chemistry, Multidisciplinary
Li Wang, Muhammad Tahir, Hua Chen, Justin B. Sambur
Article
Physics, Applied
M. Tahir, P. M. Krstajic, P. Vasilopoulos
JOURNAL OF APPLIED PHYSICS
(2020)
Article
Nanoscience & Nanotechnology
Li Wang, Zach N. Nilsson, Muhammad Tahir, Hua Chen, Justin B. Sambur
ACS APPLIED MATERIALS & INTERFACES
(2020)
Article
Materials Science, Multidisciplinary
M. Zubair, P. Vasilopoulos, M. Tahir
Summary: We investigate the electronic dispersion and transport properties of graphene/WSe2 heterostructures in the presence of spin-orbit coupling, sublattice potential, and off-resonant circularly polarized light. We find that the interplay between different perturbation terms leads to inverted spin-orbit coupled bands. At high intensity of the off-resonant light, the inverted band structure transfers into the direct band structure. The valley-Hall conductivity behaves as an even function of the Fermi energy and switches sign when the polarization of the off-resonant light changes. The valley polarization and corresponding spin polarization are affected by the presence of the off-resonant light. Furthermore, the charge Hall conductivity is finite and changes sign with the handedness of the light polarization.
Article
Materials Science, Multidisciplinary
Vassilios Vargiamidis, P. Vasilopoulos, M. Tahir, Neophytos Neophytou
Article
Materials Science, Multidisciplinary
M. Tahir, Olivier Pinaud, Hua Chen
Article
Materials Science, Multidisciplinary
M. Zubair, P. Vasilopoulos, M. Tahir
Article
Materials Science, Multidisciplinary
M. Tahir, P. M. Krstajic, P. Vasilopoulos
Article
Materials Science, Multidisciplinary
M. Zubair, M. Tahir, P. Vasilopoulos, K. Sabeeh
Article
Materials Science, Multidisciplinary
M. Tahir, P. M. Krstajic, P. Vasilopoulos
Article
Materials Science, Multidisciplinary
M. Zubair, M. Tahir, P. Vasilopoulos
