Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3685485
Keywords
niobium compounds; Raman spectra; self-assembly; thin films; transmission electron microscopy
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Funding
- KOSEF NRL
- Korea government MEST [2008-0060004]
- WCU through the KOSEF
- MEST [R31-2008-000-10057-0, 2011-0007069, 2009-0093817]
- Nano Material Technology Development Program [2011-0030228]
- Seoul RBD Program [WR090671]
- National Research Foundation of Korea(NRF)
- KOSEF
- Korea MEST (Quantum Metamaterials Research Center) [R11-2008-053-03002-0]
- Priority Research Centers through the National Research Foundation of Korea (NRF)
- National Research Foundation of Korea [2011-0007069] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Both bi-stable memory and mono-stable threshold switching are observed in amorphous NbOx films. In addition, the transition between memory and threshold switching can be induced by changing external electrical stress. Raman spectroscopy and transmission electron microscope data show that the NbOx film is self-assembled into a layered structure consisting of a top metal-rich region and a bottom oxygen-rich region. The volume ratio of the two regions depends on the film thickness. Our experimental results suggest that different characteristics of conducting filaments in the two regions result in thickness dependence of switching types and the transition between memory and threshold switching. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3685485]
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