Electrode band structure effects in thin MgO magnetic tunnel junctions
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Title
Electrode band structure effects in thin MgO magnetic tunnel junctions
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 7, Pages 072406
Publisher
AIP Publishing
Online
2012-02-16
DOI
10.1063/1.3687200
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Related references
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- (2010) J. Bernos et al. PHYSICAL REVIEW B
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- (2009) J. Cao et al. IEEE TRANSACTIONS ON MAGNETICS
- The effect of pinhole formation/growth on the tunnel magnetoresistance of MgO-based magnetic tunnel junctions
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- Inelastic electron tunneling spectra of MgO-based magnetic tunnel junctions with different electrode designs
- (2009) Volker Drewello et al. PHYSICAL REVIEW B
- Spin dependent tunneling spectroscopy in single crystalline bcc-Co/MgO/bcc-Co(001) junctions
- (2008) Shingo Nishioka et al. APPLIED PHYSICS LETTERS
- Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
- (2008) S. Ikeda et al. APPLIED PHYSICS LETTERS
- Pinholes in thin low resistance MgO-based magnetic tunnel junctions probed by temperature dependent transport measurements
- (2008) J. Ventura et al. JOURNAL OF APPLIED PHYSICS
- Disturbance of Tunneling Coherence by Oxygen Vacancy in EpitaxialFe/MgO/FeMagnetic Tunnel Junctions
- (2008) G. X. Miao et al. PHYSICAL REVIEW LETTERS
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