A higher-k tetragonal HfO2 formed by chlorine plasma treatment at interfacial layer for metal-oxide-semiconductor devices

Investigation of HfO2 high-k dielectrics electronic structure on SiO2/Si substrate by x-ray photoelectron spectroscopy

(2011) T. L. Duan et al.   APPLIED PHYSICS LETTERS

High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition

(2011) Flora M. Li et al.   APPLIED PHYSICS LETTERS

Optical properties of La-incorporated HfO2 upon crystallization

(2011) Tuo Wang et al.   APPLIED PHYSICS LETTERS

Dopant Activation in Arsenic-Implanted Si by Susceptor-Assisted Low-Temperature Microwave Anneal

(2011) Rajitha N. P. Vemuri et al.   IEEE ELECTRON DEVICE LETTERS

Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy

(2011) Jae Hyuck Jang et al.   JOURNAL OF APPLIED PHYSICS

A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

(2011) C.H. Fu et al.   MICROELECTRONIC ENGINEERING

Electronic and optical properties of hafnia polymorphs

(2011) T.V. Perevalov et al.   MICROELECTRONIC ENGINEERING

High work function metal gate and reliability improvement for MOS device by integration of TiN/MoN and HfAlO dielectric

(2010) Chung-Hao Fu et al.   SOLID-STATE ELECTRONICS

Extended Scalability of HfON/SiON Gate Stack Down to 0.57 nm Equivalent Oxide Thickness with High Carrier Mobility by Post-Deposition Annealing

(2009) Dai Ishikawa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasma–surface simulations and experiments

(2009) S Tinck et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Excellent electrical properties of TiO2∕HfSiO∕SiO2 layered higher-k gate dielectrics with sub-1nm equivalent oxide thickness

(2008) Hiroaki Arimura et al.   APPLIED PHYSICS LETTERS

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

First-principles study on doping and phase stability ofHfO2

(2008) Choong-Ki Lee et al.   PHYSICAL REVIEW B