Charge storage properties of InP quantum dots in GaAs metal-oxide-semiconductor based nonvolatile flash memory devices

Metal organic vapor phase epitaxially grown 5 nm InP quantum dots (QDs) were embedded as charge storage elements between high-k control and tunneling dielectric layers in GaAs metal-oxide-semiconductor based nonvolatile memory devices. The QDs trap more electrons resulting in a large memory window (6.3 V) along with low leakage due to Coulomb blockade effect. 16.5% charge loss was found even after 10(5) s indicating its good charge storing potential. The programming and erasing operations were discussed with proposed band diagram. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767522]